Mémoire - Zui Ai Technology（Taiwan）Company.

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Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Access Time	Write Cycle Time - Word, Page
	MT48H16M32L2B5-10	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 90VFBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	7.5ns	-
	MT48H16M32L2B5-10 IT	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 90VFBGA	Tray	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	7.5ns	-
	MT48H16M32L2B5-10 IT TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 90VFBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	7.5ns	-
	MT48H16M32L2B5-10 TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 90VFBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	7.5ns	-
	MT48H16M32L2F5-10	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 90VFBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	7.5ns	-
	MT48H16M32L2F5-10 IT	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 90VFBGA	Tray	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	7.5ns	-
	MT48H16M32L2F5-10 IT TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 90VFBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	7.5ns	-
	MT48H16M32L2F5-10 TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 90VFBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	7.5ns	-
	MT48H8M32LFB5-10	Micron Technology Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 90VFBGA	Tray	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	256Mb (8M x 32)	7ns	15ns
	MT48H8M32LFB5-10 IT	Micron Technology Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 90VFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	256Mb (8M x 32)	7ns	15ns
	MT48H8M32LFB5-10 IT TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 90VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	256Mb (8M x 32)	7ns	15ns
	MT48H8M32LFB5-10 TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 90VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	256Mb (8M x 32)	7ns	15ns
	MT48H8M32LFF5-10	Micron Technology Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 90VFBGA	Tray	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	256Mb (8M x 32)	7ns	15ns
	MT48H8M32LFF5-10 IT	Micron Technology Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 90VFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	256Mb (8M x 32)	7ns	15ns
	MT48H8M32LFF5-10 IT TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 90VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	256Mb (8M x 32)	7ns	15ns
	MT48H8M32LFF5-10 TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 90VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	256Mb (8M x 32)	7ns	15ns
	MT48LC4M32LFB5-10 IT:G	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 128M PARALLEL 90VFBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	128Mb (4M x 32)	7ns	15ns
	MT48LC4M32LFB5-10:G	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 128M PARALLEL 90VFBGA	Tray	3 V ~ 3.6 V	0°C ~ 70°C (TA)	128Mb (4M x 32)	7ns	15ns
	MT48LC4M32LFF5-10 IT:G	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 128M PARALLEL 90VFBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	128Mb (4M x 32)	7ns	15ns
	MT48LC4M32LFF5-10:G	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 90VFBGA MOQ: 1000 MPQ: 1	IC DRAM 128M PARALLEL 90VFBGA	Tray	3 V ~ 3.6 V	0°C ~ 70°C (TA)	128Mb (4M x 32)	7ns	15ns