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Découvrez les produits 356
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Supplier Device Package Memory Size Technology Clock Frequency Access Time Write Cycle Time - Word, Page
AS4C16M32MD1-5BCN
Alliance Memory,Inc.
324
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90FBGA
Tray - 1.7 V ~ 1.95 V -25°C ~ 85°C (TJ) 90-FBGA (8x13) 512Mb (16M x 32) SDRAM - Mobile LPDDR 200MHz 5ns 15ns
MT46H16M32LFB5-5 IT:C TR
Micron Technology Inc.
3,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
Tape & Reel (TR) - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-VFBGA (8x13) 512Mb (16M x 32) SDRAM - Mobile LPDDR 200MHz 5.0ns 15ns
MT46H16M32LFB5-5 IT:C TR
Micron Technology Inc.
3,890
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
Cut Tape (CT) - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-VFBGA (8x13) 512Mb (16M x 32) SDRAM - Mobile LPDDR 200MHz 5.0ns 15ns
MT46H16M32LFB5-5 IT:C TR
Micron Technology Inc.
3,890
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
- - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-VFBGA (8x13) 512Mb (16M x 32) SDRAM - Mobile LPDDR 200MHz 5.0ns 15ns
AS4C4M32MSA-6BIN
Alliance Memory,Inc.
190
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 90FBGA
Tray - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-FBGA (8x13) 128Mb (4M x 32) SDRAM - Mobile 166MHz 5.5ns -
MT46H16M32LFB5-6 AIT:C TR
Micron Technology Inc.
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
Tape & Reel (TR) - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-VFBGA (8x13) 512Mb (16M x 32) SDRAM - Mobile LPDDR 166MHz 5.0ns 15ns
MT46H16M32LFB5-6 AIT:C TR
Micron Technology Inc.
2,000
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
Cut Tape (CT) - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-VFBGA (8x13) 512Mb (16M x 32) SDRAM - Mobile LPDDR 166MHz 5.0ns 15ns
MT46H16M32LFB5-6 AIT:C TR
Micron Technology Inc.
2,000
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
- - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-VFBGA (8x13) 512Mb (16M x 32) SDRAM - Mobile LPDDR 166MHz 5.0ns 15ns
MT46H16M32LFB5-6 AT:C TR
Micron Technology Inc.
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
Tape & Reel (TR) - 1.7 V ~ 1.95 V -40°C ~ 105°C (TA) 90-VFBGA (8x13) 512Mb (16M x 32) SDRAM - Mobile LPDDR 166MHz 5.0ns 15ns
MT46H16M32LFB5-6 AT:C TR
Micron Technology Inc.
2,000
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
Cut Tape (CT) - 1.7 V ~ 1.95 V -40°C ~ 105°C (TA) 90-VFBGA (8x13) 512Mb (16M x 32) SDRAM - Mobile LPDDR 166MHz 5.0ns 15ns
MT46H16M32LFB5-6 AT:C TR
Micron Technology Inc.
2,000
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90VFBGA
- - 1.7 V ~ 1.95 V -40°C ~ 105°C (TA) 90-VFBGA (8x13) 512Mb (16M x 32) SDRAM - Mobile LPDDR 166MHz 5.0ns 15ns
MT46H32M32LFB5-5 IT:B TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 90VFBGA
Tape & Reel (TR) - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-VFBGA (8x13) 1Gb (32M x 32) SDRAM - Mobile LPDDR 200MHz 5.0ns 15ns
MT46H32M32LFB5-5 IT:B TR
Micron Technology Inc.
1,762
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 90VFBGA
Cut Tape (CT) - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-VFBGA (8x13) 1Gb (32M x 32) SDRAM - Mobile LPDDR 200MHz 5.0ns 15ns
MT46H32M32LFB5-5 IT:B TR
Micron Technology Inc.
1,762
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 90VFBGA
- - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-VFBGA (8x13) 1Gb (32M x 32) SDRAM - Mobile LPDDR 200MHz 5.0ns 15ns
AS4C64M32MD1-5BCN
Alliance Memory,Inc.
1,308
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 90FBGA
Tray - 1.7 V ~ 1.9 V -25°C ~ 85°C (TA) 90-FBGA (8x13) 2Gb (64M x 32) SDRAM - Mobile LPDDR 200MHz 5ns 15ns
MT48LC4M32B2B5-6A AAT:L TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 128M PARALLEL 90VFBGA
Tape & Reel (TR) Automotive,AEC-Q100 3 V ~ 3.6 V -40°C ~ 105°C (TA) 90-VFBGA (8x13) 128Mb (4M x 32) SDRAM 167MHz 5.4ns 12ns
MT48LC4M32B2B5-6A AAT:L TR
Micron Technology Inc.
1,874
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 90VFBGA
Cut Tape (CT) Automotive,AEC-Q100 3 V ~ 3.6 V -40°C ~ 105°C (TA) 90-VFBGA (8x13) 128Mb (4M x 32) SDRAM 167MHz 5.4ns 12ns
MT48LC4M32B2B5-6A AAT:L TR
Micron Technology Inc.
1,874
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 90VFBGA
- Automotive,AEC-Q100 3 V ~ 3.6 V -40°C ~ 105°C (TA) 90-VFBGA (8x13) 128Mb (4M x 32) SDRAM 167MHz 5.4ns 12ns
AS4C16M32MSA-6BIN
Alliance Memory,Inc.
74
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90FBGA
Tray - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-FBGA (8x13) 512Mb (16M x 32) SDRAM - Mobile SDRAM 166MHz 5.4ns 15ns
AS4C8M32MSA-6BIN
Alliance Memory,Inc.
22
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 90FBGA
Tray - 1.14 V ~ 1.95 V -40°C ~ 85°C (TA) 90-FBGA (8x13) 256Mb (8M x 32) SDRAM - Mobile 166MHz 5.5ns 15ns