Découvrez les produits 20
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Supplier Device Package Technology Clock Frequency Access Time
W947D6HBHX5E
Winbond Electronics
245
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
Tray 1.7 V ~ 1.95 V -25°C ~ 85°C (TC) 60-VFBGA (8x9) SDRAM - Mobile LPDDR 200MHz 5ns
W947D6HBHX5I
Winbond Electronics
212
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 60-VFBGA (8x9) SDRAM - Mobile LPDDR 200MHz 5ns
W947D6HBHX5E TR
Winbond Electronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -25°C ~ 85°C (TC) 60-VFBGA (8x9) SDRAM - Mobile LPDDR 200MHz 5ns
W947D6HBHX5E TR
Winbond Electronics
1,945
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
Cut Tape (CT) 1.7 V ~ 1.95 V -25°C ~ 85°C (TC) 60-VFBGA (8x9) SDRAM - Mobile LPDDR 200MHz 5ns
W947D6HBHX5E TR
Winbond Electronics
1,945
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
- 1.7 V ~ 1.95 V -25°C ~ 85°C (TC) 60-VFBGA (8x9) SDRAM - Mobile LPDDR 200MHz 5ns
W947D6HBHX5I TR
Winbond Electronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 60-VFBGA (8x9) SDRAM - Mobile LPDDR 200MHz 5ns
W947D6HBHX6E TR
Winbond Electronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -25°C ~ 85°C (TC) 60-VFBGA (8x9) SDRAM - Mobile LPDDR 166MHz 5ns
AS4C8M16D1-5BCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 60TFBGA
Tape & Reel (TR) 2.3 V ~ 2.7 V 0°C ~ 70°C (TA) 60-TFBGA (8x13) SDRAM - DDR 200MHz 700ps
AS4C8M16D1-5BINTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 60TFBGA
Tape & Reel (TR) 2.3 V ~ 2.7 V -40°C ~ 85°C (TA) 60-TFBGA (8x13) SDRAM - DDR 200MHz 700ps
W947D6HBHX6E
Winbond Electronics
Enquête
-
-
MOQ: 312  MPQ: 1
IC DRAM 128M PARALLEL 60VFBGA
Tray 1.7 V ~ 1.95 V -25°C ~ 85°C (TC) 60-VFBGA (8x9) SDRAM - Mobile LPDDR 166MHz 5ns
AS4C8M16D1-5BCN
Alliance Memory,Inc.
Enquête
-
-
MOQ: 240  MPQ: 1
IC DRAM 128M PARALLEL 60TFBGA
Tray 2.3 V ~ 2.7 V 0°C ~ 70°C (TA) 60-TFBGA (8x13) SDRAM - DDR 200MHz 700ps
AS4C8M16D1-5BIN
Alliance Memory,Inc.
Enquête
-
-
MOQ: 240  MPQ: 1
IC DRAM 128M PARALLEL 60TFBGA
Tray 2.3 V ~ 2.7 V -40°C ~ 85°C (TA) 60-TFBGA (8x13) SDRAM - DDR 200MHz 700ps
IS43LR16800G-6BL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 128M PARALLEL 60TFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) 60-TFBGA (8x10) SDRAM - Mobile LPDDR 166MHz 5.5ns
IS43LR16800G-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 128M PARALLEL 60TFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 60-TFBGA (8x10) SDRAM - Mobile LPDDR 166MHz 5.5ns
IS43LR16800G-6BL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 300  MPQ: 1
IC DRAM 128M PARALLEL 60TFBGA
Tray 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) 60-TFBGA (8x10) SDRAM - Mobile LPDDR 166MHz 5.5ns
IS43LR16800G-6BLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 300  MPQ: 1
IC DRAM 128M PARALLEL 60TFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 60-TFBGA (8x10) SDRAM - Mobile LPDDR 166MHz 5.5ns
IS43LR16800F-6BLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 300  MPQ: 1
IC DRAM 128M PARALLEL 60TFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 60-TFBGA (8x10) SDRAM - Mobile LPDDR 166MHz 5.5ns
IS43LR16800F-6BL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 300  MPQ: 1
IC DRAM 128M PARALLEL 60TFBGA
Tray 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) 60-TFBGA (8x10) SDRAM - Mobile LPDDR 166MHz 5.5ns
IS43LR16800F-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 128M PARALLEL 60TFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 60-TFBGA (8x10) SDRAM - Mobile LPDDR 166MHz 5.5ns
IS43LR16800F-6BL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 128M PARALLEL 60TFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) 60-TFBGA (8x10) SDRAM - Mobile LPDDR 166MHz 5.5ns