Fabricant:
Write Cycle Time - Word, Page:
Découvrez les produits 26
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Operating Temperature Clock Frequency Access Time Write Cycle Time - Word, Page
IS42S32160F-7TLI
ISSI,Integrated Silicon Solution Inc
219
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tube -40°C ~ 85°C (TA) 143MHz 5.4ns -
AS4C16M32SC-7TIN
Alliance Memory,Inc.
104
3 jours
-
MOQ: 1  MPQ: 1
512M - C DIE NEW 16M X 32 3.3V 1
Tray -40°C ~ 85°C (TA) 133MHz 17ns 15ns
AS4C16M32SC-7TINTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
512M - C DIE NEW 16M X 32 3.3V 1
Tape & Reel (TR) -40°C ~ 85°C (TA) 133MHz 17ns 15ns
IS42S32160F-7TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tape & Reel (TR) 0°C ~ 70°C (TA) 143MHz 5.4ns -
IS42S32160F-75ETL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tape & Reel (TR) 0°C ~ 70°C (TA) 133MHz 6ns -
IS42S32160F-7TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tape & Reel (TR) -40°C ~ 85°C (TA) 143MHz 5.4ns -
IS42S32160F-7TL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 108  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tray 0°C ~ 70°C (TA) 143MHz 5.4ns -
IS42S32160F-75ETL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 108  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tray 0°C ~ 70°C (TA) 133MHz 6ns -
IS42S32160F-75ETLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tape & Reel (TR) -40°C ~ 85°C (TA) 133MHz 6ns -
IS42S32160F-75ETLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 108  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tray -40°C ~ 85°C (TA) 133MHz 6ns -
IS42S32160B-75TL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 144  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tray 0°C ~ 70°C (TA) 133MHz 5.5ns -
IS42S32160B-75TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tape & Reel (TR) 0°C ~ 70°C (TA) 133MHz 5.5ns -
IS42S32160B-75TLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 144  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tray -40°C ~ 85°C (TA) 133MHz 5.5ns -
IS42S32160B-75TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tape & Reel (TR) -40°C ~ 85°C (TA) 133MHz 5.5ns -
IS42S32160B-7TL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 108  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tray 0°C ~ 70°C (TA) 143MHz 5.4ns -
IS42S32160B-7TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tape & Reel (TR) 0°C ~ 70°C (TA) 143MHz 5.4ns -
IS42S32160B-7TLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 108  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tray -40°C ~ 85°C (TA) 143MHz 5.4ns -
IS42S32160B-7TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tape & Reel (TR) -40°C ~ 85°C (TA) 143MHz 5.4ns -
IS42S32160B-6TLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 108  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tray -40°C ~ 85°C (TA) 166MHz 5.4ns -
IS42S32160B-6TLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1500  MPQ: 1
IC DRAM 512M PARALLEL 86TSOP II
Tape & Reel (TR) -40°C ~ 85°C (TA) 166MHz 5.4ns -