- Packaging：
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- Voltage - Supply：
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- Package / Case：
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- Supplier Device Package：
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- Memory Size：
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- Memory Type：
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- Memory Format：
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- Conditions sélectionnées:
Découvrez les produits 18
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Memory Interface | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Memory Interface | Write Cycle Time - Word, Page | |
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Microchip Technology |
493
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 64K SPI 10MHZ 8SOIC
|
Tube | 2.5 V ~ 5.5 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | 64Kb (8K x 8) | Non-Volatile | EEPROM | EEPROM | 10MHz | SPI | 5ms | |||
|
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IDT，Integrated Device Technology Inc |
46
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28CERDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.600"，15.24mm) | 28-CerDip | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | Parallel | - | |||
|
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Microchip Technology |
66
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 512K SPI 20MHZ 8SOIC
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Tube | 2.5 V ~ 5.5 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | 512Kb (64K x 8) | Non-Volatile | EEPROM | EEPROM | 20MHz | SPI | 5ms | |||
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IDT，Integrated Device Technology Inc |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC SRAM 64K PARALLEL 28CERDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.600"，15.24mm) | 28-CerDip | Through Hole | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | Parallel | - | |||
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3300 MPQ: 1
|
IC EEPROM 64K SPI 10MHZ 8SOIC
|
Tape & Reel (TR) | 2.5 V ~ 5.5 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | 64Kb (8K x 8) | Non-Volatile | EEPROM | EEPROM | 10MHz | SPI | 5ms | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 3300 MPQ: 1
|
IC EEPROM 512K SPI 20MHZ 8SOIC
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Tape & Reel (TR) | 2.5 V ~ 5.5 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | 512Kb (64K x 8) | Non-Volatile | EEPROM | EEPROM | 20MHz | SPI | 5ms | |||
|
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IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
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MOQ: 130 MPQ: 1
|
IC SRAM 256K PARALLEL 28CERDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.600"，15.24mm) | 28-CerDip | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | Parallel | - | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 3300 MPQ: 1
|
IC EEPROM 256K SPI 10MHZ 8DFN
|
Tape & Reel (TR) | 2.5 V ~ 5.5 V | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | 10MHz | SPI | 5ms | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 60 MPQ: 1
|
IC EEPROM 256K SPI 10MHZ 8DFN
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Tube | 2.5 V ~ 5.5 V | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | 10MHz | SPI | 5ms | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC EEPROM 4K SPI 10MHZ 8DIP
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Tube | 2.5 V ~ 5.5 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | 4Kb (512 x 8) | Non-Volatile | EEPROM | EEPROM | 10MHz | SPI | 5ms | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC EEPROM 4K SPI 10MHZ 8SOIC
|
Tube | 2.5 V ~ 5.5 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | 4Kb (512 x 8) | Non-Volatile | EEPROM | EEPROM | 10MHz | SPI | 5ms | |||
|
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC EEPROM 4K SPI 10MHZ 8SOIC
|
Tape & Reel (TR) | 2.5 V ~ 5.5 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | 4Kb (512 x 8) | Non-Volatile | EEPROM | EEPROM | 10MHz | SPI | 5ms | |||
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|
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Cypress Semiconductor Corp |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC SRAM 72M PARALLEL 165CCGA
|
Tray | 1.7 V ~ 1.9 V | 165-BFCCGA | 165-CCGA (21x25) | Through Hole | 72Mb (4M x 18) | Volatile | SRAM - Synchronous，QDR II+ | SRAM | 250MHz | Parallel | - | ||
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|
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Cypress Semiconductor Corp |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC SRAM 72M PARALLEL 165CCGA
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Tray | 1.7 V ~ 1.9 V | 165-BFCCGA | 165-CCGA (21x25) | Through Hole | 72Mb (4M x 18) | Volatile | SRAM - Synchronous，QDR II+ | SRAM | 250MHz | Parallel | - | ||
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|
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Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 72M PARALLEL 165CCGA
|
Tray | 1.7 V ~ 1.9 V | 165-BFCCGA | 165-CCGA (21x25) | Through Hole | 72Mb (2M x 36) | Volatile | SRAM - Synchronous，QDR II+ | SRAM | 250MHz | Parallel | - | ||
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|
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Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 72M PARALLEL 165CCGA
|
Tray | 1.7 V ~ 1.9 V | 165-BFCCGA | 165-CCGA (21x25) | Through Hole | 72Mb (2M x 36) | Volatile | SRAM - Synchronous，QDR II+ | SRAM | 250MHz | Parallel | - | ||
|
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IDT，Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 40 MPQ: 1
|
IC SRAM 8K PARALLEL
|
Tube | 4.5 V ~ 5.5 V | 48-DIP (0.600"，15.24mm) | 48-SIDE BRAZED | Through Hole | 8K (1K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | Parallel | - | |||
|
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Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 72M PARALLEL 165CCGA
|
Tray | 1.7 V ~ 1.9 V | 165-BFCCGA | 165-CCGA (21x25) | Through Hole | 72Mb (4M x 18) | Volatile | SRAM - Synchronous，QDR II+ | SRAM | 250MHz | Parallel | - |
