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- Conditions sélectionnées:
Découvrez les produits 302
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 75 MPQ: 1
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IC RAM 64 PARALLEL 16DIP
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Tube | 3 V ~ 15 V | 16-DIP (0.300"，7.62mm) | 16-PDIP | Through Hole | 64b (16 x 4) | Volatile | RAM | RAM | - | 280ns | Parallel | - | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 24 MPQ: 1
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IC NVSRAM 256K PARALLEL 32CDIP
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Tube | 4.5 V ~ 5.5 V | 32-CDIP (0.300"，7.62mm) | 32-CDIP | Through Hole | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 35ns | Parallel | 35ns | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 65 MPQ: 1
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IC NVSRAM 64K PARALLEL 28CDIP
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Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300"，7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 35ns | Parallel | 35ns | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 26 MPQ: 1
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IC NVSRAM 64K PARALLEL 28CDIP
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Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300"，7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 55ns | Parallel | 55ns | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 24 MPQ: 1
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IC NVSRAM 256K PARALLEL 32CDIP
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Tube | 4.5 V ~ 5.5 V | 32-CDIP (0.300"，7.62mm) | 32-CDIP | Through Hole | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 35ns | Parallel | 35ns | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 24 MPQ: 1
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IC NVSRAM 256K PARALLEL 32CDIP
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Tube | 4.5 V ~ 5.5 V | 32-CDIP (0.300"，7.62mm) | 32-CDIP | Through Hole | 256Kb (32K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 45ns | Parallel | 45ns | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 26 MPQ: 1
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IC NVSRAM 64K PARALLEL 28CDIP
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Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300"，7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 55ns | Parallel | 55ns | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 68 MPQ: 1
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IC NVSRAM 64K PARALLEL 28LCC
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Tube | 4.5 V ~ 5.5 V | 28-LCC | 28-LCC (13.97x8.89) | Surface Mount | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 55ns | Parallel | 55ns | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 68 MPQ: 1
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IC NVSRAM 64K PARALLEL 28LCC
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Tube | 4.5 V ~ 5.5 V | 28-LCC | 28-LCC (13.97x8.89) | Surface Mount | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 35ns | Parallel | 35ns | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 26 MPQ: 1
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IC NVSRAM 64K PARALLEL 28CDIP
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Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300"，7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 55ns | Parallel | 55ns | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 26 MPQ: 1
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IC NVSRAM 64K PARALLEL 28CDIP
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Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300"，7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 35ns | Parallel | 35ns | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 68 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28LCC
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Tray | 4.5 V ~ 5.5 V | 28-LCC | 28-LCC (13.97x8.89) | Surface Mount | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 35ns | Parallel | 35ns | ||
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Microchip Technology |
493
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC EEPROM 64K SPI 10MHZ 8SOIC
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Tube | 2.5 V ~ 5.5 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | 64Kb (8K x 8) | Non-Volatile | EEPROM | EEPROM | 10MHz | - | SPI | 5ms | |||
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IDT，Integrated Device Technology Inc |
282
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC SRAM 16K PARALLEL 24CDIP
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Tube | 4.5 V ~ 5.5 V | 24-CDIP (0.600"，15.24mm) | 24-CDIP | Through Hole | 16Kb (2K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 120ns | Parallel | 120ns | |||
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Microchip Technology |
695
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC EEPROM 16K I2C 400KHZ 8SOIC
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Tube | 2.5 V ~ 5.5 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | 16Kb (2K x 8) | Non-Volatile | EEPROM | EEPROM | 400kHz | 900ns | I2C | 5ms | |||
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IDT，Integrated Device Technology Inc |
674
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC SRAM 16K PARALLEL 24CDIP
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Tray | 4.5 V ~ 5.5 V | 24-CDIP (0.600"，15.24mm) | 24-CDIP | Through Hole | 16Kb (2K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 90ns | Parallel | 90ns | |||
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IDT，Integrated Device Technology Inc |
612
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC SRAM 256K PARALLEL 28CERDIP
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Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.600"，15.24mm) | 28-CerDip | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 45ns | Parallel | 45ns | |||
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IDT，Integrated Device Technology Inc |
65
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC SRAM 256K PARALLEL 28CERDIP
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Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.600"，15.24mm) | 28-CerDip | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 70ns | Parallel | 70ns | |||
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IDT，Integrated Device Technology Inc |
46
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC SRAM 256K PARALLEL 28CERDIP
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Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.600"，15.24mm) | 28-CerDip | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | - | Parallel | - | |||
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Microchip Technology |
66
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC EEPROM 512K SPI 20MHZ 8SOIC
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Tube | 2.5 V ~ 5.5 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | 512Kb (64K x 8) | Non-Volatile | EEPROM | EEPROM | 20MHz | - | SPI | 5ms |
