- Packaging:
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- Voltage - Supply:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Memory Size:
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- Memory Type:
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- Technology:
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- Memory Format:
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- Clock Frequency:
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- Access Time:
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- Memory Interface:
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- Conditions sélectionnées:
Découvrez les produits 302
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | ||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 70ns | Parallel | 70ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 85ns | Parallel | 85ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 130 MPQ: 1
|
IC SRAM 64K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 20ns | Parallel | 20ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 25ns | Parallel | 25ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 35ns | Parallel | 35ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 55ns | Parallel | 55ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 70ns | Parallel | 70ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 85ns | Parallel | 85ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 169 MPQ: 1
|
IC SRAM 64K PARALLEL 28DIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.600",15.24mm) | 28-DIP | Through Hole | 64Kb (8K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 70ns | Parallel | 70ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 130 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 45ns | Parallel | 45ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 130 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 100ns | Parallel | 100ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 130 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 25ns | Parallel | 25ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 130 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 35ns | Parallel | 35ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 130 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 45ns | Parallel | 45ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 130 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 55ns | Parallel | 55ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 130 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 70ns | Parallel | 70ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 130 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 85ns | Parallel | 85ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 130 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 100ns | Parallel | 100ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 130 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 25ns | Parallel | 25ns | ||||
IDT,Integrated Device Technology Inc |
Enquête
|
- |
-
|
MOQ: 130 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
Tube | 4.5 V ~ 5.5 V | 28-CDIP (0.300",7.62mm) | 28-CDIP | Through Hole | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | - | 35ns | Parallel | 35ns |