Fabricant:
Memory Interface:
Découvrez les produits 302
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Package / Case Supplier Device Package Mounting Type Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Memory Interface Write Cycle Time - Word, Page
7164L70TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 70ns Parallel 70ns
7164L85TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 85ns Parallel 85ns
7164S20TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 130  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 20ns Parallel 20ns
7164S25TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 25ns Parallel 25ns
7164S35TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 35ns Parallel 35ns
7164S55TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 55ns Parallel 55ns
7164S70TDB
IDT,Integrated Device Technology Inc
Enquête
-
-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 70ns Parallel 70ns
7164S85TDB
IDT,Integrated Device Technology Inc
Enquête
-
-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 85ns Parallel 85ns
7164L70DB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28DIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.600",15.24mm) 28-DIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 70ns Parallel 70ns
71256S45TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 130  MPQ: 1
IC SRAM 256K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM - 45ns Parallel 45ns
71256L100TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 130  MPQ: 1
IC SRAM 256K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM - 100ns Parallel 100ns
71256L25TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 130  MPQ: 1
IC SRAM 256K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM - 25ns Parallel 25ns
71256L35TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 130  MPQ: 1
IC SRAM 256K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM - 35ns Parallel 35ns
71256L45TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 130  MPQ: 1
IC SRAM 256K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM - 45ns Parallel 45ns
71256L55TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 130  MPQ: 1
IC SRAM 256K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM - 55ns Parallel 55ns
71256L70TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 130  MPQ: 1
IC SRAM 256K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM - 70ns Parallel 70ns
71256L85TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 130  MPQ: 1
IC SRAM 256K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM - 85ns Parallel 85ns
71256S100TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 130  MPQ: 1
IC SRAM 256K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM - 100ns Parallel 100ns
71256S25TDB
IDT,Integrated Device Technology Inc
Enquête
-
-
MOQ: 130  MPQ: 1
IC SRAM 256K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM - 25ns Parallel 25ns
71256S35TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 130  MPQ: 1
IC SRAM 256K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 256Kb (32K x 8) Volatile SRAM - Asynchronous SRAM - 35ns Parallel 35ns