Fabricant:
Memory Interface:
Découvrez les produits 302
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Package / Case Supplier Device Package Mounting Type Memory Size Memory Type Technology Memory Format Clock Frequency Access Time Memory Interface Write Cycle Time - Word, Page
6116LA20TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 300  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 20ns Parallel 20ns
6116LA25TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 300  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 25ns Parallel 25ns
6116LA35TDB
IDT,Integrated Device Technology Inc
Enquête
-
-
MOQ: 300  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 35ns Parallel 35ns
6116LA45TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 300  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 45ns Parallel 45ns
6116LA55TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 300  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 55ns Parallel 55ns
6116LA70TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 300  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 70ns Parallel 70ns
6116LA90TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 300  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 90ns Parallel 90ns
6116SA120TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 300  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 120ns Parallel 120ns
6116SA150TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 300  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 150ns Parallel 150ns
6116SA35TDB
IDT,Integrated Device Technology Inc
Enquête
-
-
MOQ: 300  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 35ns Parallel 35ns
6116SA70TDB
IDT,Integrated Device Technology Inc
Enquête
-
-
MOQ: 300  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 70ns Parallel 70ns
6116SA90TDB
IDT,Integrated Device Technology Inc
Enquête
-
-
MOQ: 300  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 90ns Parallel 90ns
6116SA20TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 180  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 20ns Parallel 20ns
6116SA25TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 180  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 25ns Parallel 25ns
6116SA45TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 180  MPQ: 1
IC SRAM 16K PARALLEL 24CDIP
Tray 4.5 V ~ 5.5 V 24-CDIP (0.300",7.62mm) 24-CDIP Through Hole 16Kb (2K x 8) Volatile SRAM - Asynchronous SRAM - 45ns Parallel 45ns
7164L20TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 20ns Parallel 20ns
7164L25TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 25ns Parallel 25ns
7164L35TDB
IDT,Integrated Device Technology Inc
Enquête
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MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 35ns Parallel 35ns
7164L45TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 45ns Parallel 45ns
7164L55TDB
IDT,Integrated Device Technology Inc
Enquête
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-
MOQ: 169  MPQ: 1
IC SRAM 64K PARALLEL 28CDIP
Tube 4.5 V ~ 5.5 V 28-CDIP (0.300",7.62mm) 28-CDIP Through Hole 64Kb (8K x 8) Volatile SRAM - Asynchronous SRAM - 55ns Parallel 55ns