Memory Format:
Write Cycle Time - Word, Page:
Découvrez les produits 173
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Package / Case Supplier Device Package Memory Size Technology Memory Format Access Time Write Cycle Time - Word, Page
MT47H32M16NF-25E IT:H TR
Micron Technology Inc.
6,000
3 jours
-
MOQ: 2000  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V 84-TFBGA 84-FBGA (8x12.5) 512Mb (32M x 16) SDRAM - DDR2 DRAM 400ps 15ns
MT47H32M16NF-25E IT:H TR
Micron Technology Inc.
7,562
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
Cut Tape (CT) 1.7 V ~ 1.9 V 84-TFBGA 84-FBGA (8x12.5) 512Mb (32M x 16) SDRAM - DDR2 DRAM 400ps 15ns
MT47H32M16NF-25E IT:H TR
Micron Technology Inc.
7,562
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
- 1.7 V ~ 1.9 V 84-TFBGA 84-FBGA (8x12.5) 512Mb (32M x 16) SDRAM - DDR2 DRAM 400ps 15ns
AS4C64M8D2-25BIN
Alliance Memory,Inc.
528
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V 60-TFBGA 60-FBGA (8x10) 512Mb (64M x 8) SDRAM - DDR2 DRAM 400ps 15ns
W97AH2KBVX2I
Winbond Electronics
215
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V 134-VFBGA 134-VFBGA (10x11.5) 1Gb (32M x 32) SDRAM - Mobile LPDDR2 DRAM - 15ns
IS43DR16640B-25DBLI
ISSI,Integrated Silicon Solution Inc
635
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 84WBGA
Tray 1.7 V ~ 1.9 V 84-TFBGA 84-WBGA (8x12.5) 1Gb (64M x 16) SDRAM - DDR2 DRAM 400ps 15ns
IS43DR16128C-25DBLI
ISSI,Integrated Silicon Solution Inc
172
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84TWBGA
Tray 1.7 V ~ 1.9 V 84-TFBGA 84-TWBGA (8x12.5) 2Gb (128M x 16) SDRAM - DDR2 DRAM 400ns 15ns
W978H6KBVX2I
Winbond Electronics
171
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V 134-VFBGA 134-VFBGA (10x11.5) 256Mb (16M x 16) SDRAM - Mobile LPDDR2 DRAM - 15ns
W979H6KBVX2I
Winbond Electronics
171
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V 134-VFBGA 134-VFBGA (10x11.5) 512Mb (32M x 16) SDRAM - Mobile LPDDR2 DRAM - 15ns
W979H2KBVX2I
Winbond Electronics
156
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V 134-VFBGA 134-VFBGA (10x11.5) 512Mb (16M x 32) SDRAM - Mobile LPDDR2 DRAM - 15ns
AS4C64M16MD2A-25BIN
Alliance Memory,Inc.
128
3 jours
-
MOQ: 1  MPQ: 1
134-BALL FBGA (10X11.5X1.0)
Tray 1.14 V ~ 1.95 V 134-VFBGA 134-FBGA (10x11.5) 1Gb (64M x 16) SDRAM - Mobile LPDDR2 DRAM - 15ns
IS43DR16320E-25DBLI
ISSI,Integrated Silicon Solution Inc
234
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 84TWBGA
Tray 1.7 V ~ 1.9 V 84-TFBGA 84-TWBGA (8x12.5) 512Mb (32M x 16) SDRAM - DDR2 DRAM 400ns 15ns
IS43DR86400E-25DBLI
ISSI,Integrated Silicon Solution Inc
291
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 60TWBGA
Tray 1.7 V ~ 1.9 V 60-TFBGA 60-TWBGA (8x10.5) 512Mb (64M x 8) SDRAM - DDR2 DRAM 400ns 15ns
IS43DR16640C-25DBLI
ISSI,Integrated Silicon Solution Inc
149
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 84TWBGA
Tray 1.7 V ~ 1.9 V 84-TFBGA 84-TWBGA (8x12.5) 1Gb (64M x 16) SDRAM - DDR2 DRAM 400ns 15ns
CY7C1250KV18-400BZI
Cypress Semiconductor Corp
102
3 jours
-
MOQ: 1  MPQ: 1
IC SRAM 36M PARALLEL 165FBGA
Tray 1.7 V ~ 1.9 V 165-LBGA 165-FBGA (13x15) 36Mb (1M x 36) SRAM - Synchronous,DDR II+ SRAM - -
W97AH6KBVX2I
Winbond Electronics
97
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V 134-VFBGA 134-VFBGA (10x11.5) 1Gb (64M x 16) SDRAM - Mobile LPDDR2 DRAM - 15ns
IS43DR81280C-25DBLI
ISSI,Integrated Silicon Solution Inc
51
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 60TWBGA
Tray 1.7 V ~ 1.9 V 60-TFBGA 60-TWBGA (8x10.5) 1Gb (128M x 8) SDRAM - DDR2 DRAM 400ps 15ns
IS43DR82560C-25DBLI
ISSI,Integrated Silicon Solution Inc
50
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 60TWBGA
Tray 1.7 V ~ 1.9 V 60-TFBGA 60-TWBGA (8x10.5) 2Gb (256M x 8) SDRAM - DDR2 DRAM 400ps 15ns
IS43DR16128B-25EBLI
ISSI,Integrated Silicon Solution Inc
26
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 84TWBGA
Tray 1.7 V ~ 1.9 V 84-TFBGA 84-TWBGA (10.5x13) 2Gb (128M x 16) SDRAM - DDR2 DRAM 400ps 15ns
CY7C12631KV18-400BZI
Cypress Semiconductor Corp
8
3 jours
-
MOQ: 1  MPQ: 1
IC SRAM 36M PARALLEL 165FBGA
Tray 1.7 V ~ 1.9 V 165-LBGA 165-FBGA (13x15) 36Mb (2M x 18) SRAM - Synchronous,QDR II+ SRAM - -