Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Memory Size：

Memory Type：

Technology：

Memory Format：

Access Time：

Memory Interface：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Memory Size	Memory Type	Technology	Memory Format	Access Time	Memory Interface	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Memory Size	Memory Type	Technology	Memory Format	Access Time	Memory Interface	Write Cycle Time - Word, Page
	W9751G6KB-25	Winbond Electronics	20,933	3 jours	-	IC DRAM 512M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-TFBGA	84-WBGA (8x12.5)	Surface Mount	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	MT47H32M16NF-25E IT:H TR	Micron Technology Inc.	6,000	3 jours	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 2000 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	Tape & Reel (TR)	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	84-TFBGA	84-FBGA (8x12.5)	Surface Mount	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	MT47H32M16NF-25E IT:H TR	Micron Technology Inc.	7,562	3 jours	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	Cut Tape (CT)	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	84-TFBGA	84-FBGA (8x12.5)	Surface Mount	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	MT47H32M16NF-25E IT:H TR	Micron Technology Inc.	7,562	3 jours	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	84-TFBGA	84-FBGA (8x12.5)	Surface Mount	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	AS4C128M8D2-25BIN	Alliance Memory，Inc.	2,279	3 jours	-	IC DRAM 1G PARALLEL 60FBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	60-TFBGA	60-FBGA (8x10)	Surface Mount	1Gb (128M x 8)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	SFEM008GB1EA1TO-I-GE-111-STD	Swissbit	191	3 jours	-	IC FLASH 8GBIT EMMC 153LFBGA MOQ: 1 MPQ: 1	IC FLASH 8GBIT EMMC 153LFBGA	Tray	EM-20	2.7 V ~ 3.6 V	-40°C ~ 85°C	153-LFBGA	153-LFBGA (11.5x13)	Surface Mount	8Gb (1G x 8)	Non-Volatile	FLASH - NAND (MLC)	Flash	-	eMMC	-
	AS4C128M16D2-25BIN	Alliance Memory，Inc.	331	3 jours	-	IC DRAM 2G PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 84FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-TFBGA	84-FBGA (10.5x13.5)	Surface Mount	2Gb (128M x 16)	Volatile	SDRAM - DDR2	DRAM	-	Parallel	15ns
	MT47H128M16RT-25E:C	Micron Technology Inc.	1,247	3 jours	-	IC DRAM 2G PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 84FBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-TFBGA	84-FBGA (9x12.5)	Surface Mount	2Gb (128M x 16)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	MT47H256M8EB-25E:C	Micron Technology Inc.	559	3 jours	-	IC DRAM 2G PARALLEL 60FBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60FBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-TFBGA	60-FBGA (9x11.5)	Surface Mount	2Gb (256M x 8)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	MT47H128M16RT-25E IT:C	Micron Technology Inc.	4,868	3 jours	-	IC DRAM 2G PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 84FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-TFBGA	84-FBGA (9x12.5)	Surface Mount	2Gb (128M x 16)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	MT47H256M8EB-25E IT:C	Micron Technology Inc.	642	3 jours	-	IC DRAM 2G PARALLEL 60FBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	60-TFBGA	60-FBGA (9x11.5)	Surface Mount	2Gb (256M x 8)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	W9751G6KB25I	Winbond Electronics	700	3 jours	-	IC DRAM 512M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-TFBGA	84-WBGA (8x12.5)	Surface Mount	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	IS43DR16640C-25DBL	ISSI，Integrated Silicon Solution Inc	1,149	3 jours	-	IC DRAM 1G PARALLEL 84TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84TWBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-TFBGA	84-TWBGA (8x12.5)	Surface Mount	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	400ns	Parallel	15ns
	AS4C32M16D2A-25BIN	Alliance Memory，Inc.	444	3 jours	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-TFBGA	84-FBGA (8x12.5)	Surface Mount	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	IS43DR16640B-25DBL	ISSI，Integrated Silicon Solution Inc	615	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	84-TFBGA	84-WBGA (8x12.5)	Surface Mount	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	AS4C64M16D2A-25BIN	Alliance Memory，Inc.	653	3 jours	-	IC DRAM 1G PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84FBGA	Bulk	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-TFBGA	84-FBGA (8x12.5)	Surface Mount	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	AS4C64M8D2-25BIN	Alliance Memory，Inc.	528	3 jours	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	60-TFBGA	60-FBGA (8x10)	Surface Mount	512Mb (64M x 8)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	W97AH2KBVX2I	Winbond Electronics	215	3 jours	-	IC DRAM 1G PARALLEL 134VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 134VFBGA	Tray	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TA)	134-VFBGA	134-VFBGA (10x11.5)	Surface Mount	1Gb (32M x 32)	Volatile	SDRAM - Mobile LPDDR2	DRAM	-	Parallel	15ns
	IS43DR16640B-25DBLI	ISSI，Integrated Silicon Solution Inc	635	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	84-TFBGA	84-WBGA (8x12.5)	Surface Mount	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns
	IS43DR82560C-25DBL	ISSI，Integrated Silicon Solution Inc	234	3 jours	-	IC DRAM 2G PARALLEL 60TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 60TWBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-TFBGA	60-TWBGA (8x10.5)	Surface Mount	2Gb (256M x 8)	Volatile	SDRAM - DDR2	DRAM	400ps	Parallel	15ns

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