- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Memory Size：
-
- Clock Frequency：
-
- Access Time：
-
- Memory Interface：
-
- Write Cycle Time - Word, Page：
-
- Conditions sélectionnées:
Découvrez les produits 433
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|
|
|
STMicroelectronics |
584
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28PCDIP
|
Tube | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-PCDIP，CAPHAT? | Through Hole | 64Kb (8K x 8) | - | 100ns | Parallel | 100ns | ||
|
|
|
Maxim Integrated |
335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | - | 100ns | Parallel | 100ns | ||
|
|
|
Maxim Integrated |
142
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | - | 150ns | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
635
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | - | 120ns | Parallel | 120ns | ||
|
|
|
Maxim Integrated |
383
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | - | 100ns | Parallel | 100ns | ||
|
|
|
Maxim Integrated |
179
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | -40°C ~ 85°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | - | 70ns | Parallel | 70ns | ||
|
|
|
Maxim Integrated |
213
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | - | 120ns | Parallel | 120ns | ||
|
|
|
Maxim Integrated |
344
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | - | 70ns | Parallel | 70ns | ||
|
|
|
Maxim Integrated |
385
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24EDIP
|
Tube | -40°C ~ 85°C (TA) | 24-DIP Module (0.600"，15.24mm) | 24-EDIP | Through Hole | 16Kb (2K x 8) | - | 100ns | Parallel | 100ns | ||
|
|
|
Maxim Integrated |
121
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24EDIP
|
Tube | 0°C ~ 70°C (TA) | 24-DIP Module (0.600"，15.24mm) | 24-EDIP | Through Hole | 16Kb (2K x 8) | - | 200ns | Parallel | 200ns | ||
|
|
|
Maxim Integrated |
191
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | - | 150ns | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | - | 85ns | Parallel | 85ns | ||
|
|
|
Maxim Integrated |
192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | - | 200ns | Parallel | 200ns | ||
|
|
|
Maxim Integrated |
280
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | - | 150ns | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
122
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | - | 200ns | Parallel | 200ns | ||
|
|
|
Maxim Integrated |
230
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | -40°C ~ 85°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | - | 150ns | Parallel | 150ns | ||
|
|
|
Maxim Integrated |
3,477
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | -40°C ~ 85°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | - | 70ns | Parallel | 70ns | ||
|
|
|
Maxim Integrated |
148
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | - | 200ns | Parallel | 200ns | ||
|
|
|
STMicroelectronics |
467
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24PCDIP
|
Tube | 0°C ~ 70°C (TA) | 24-DIP Module (0.600"，15.24mm) | 24-PCDIP，CAPHAT? | Through Hole | 16Kb (2K x 8) | - | 70ns | Parallel | 70ns | ||
|
|
|
Maxim Integrated |
292
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24EDIP
|
Tube | 0°C ~ 70°C (TA) | 24-DIP Module (0.600"，15.24mm) | 24-EDIP | Through Hole | 16Kb (2K x 8) | - | 120ns | Parallel | 120ns |
