- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Memory Size:
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- Clock Frequency:
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- Access Time:
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- Memory Interface:
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- Write Cycle Time - Word, Page:
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- Conditions sélectionnées:
Découvrez les produits 1,116
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | ||
STMicroelectronics |
1,042
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24PCDIP
|
Tube | 4.75 V ~ 5.5 V | 0°C ~ 70°C (TA) | 24-DIP Module (0.600",15.24mm) | 24-PCDIP,CAPHAT? | Through Hole | 16Kb (2K x 8) | - | 150ns | Parallel | 150ns | ||||
STMicroelectronics |
1,115
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28PCDIP
|
Tube | 4.75 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600",15.24mm) | 28-PCDIP,CAPHAT? | Through Hole | 64Kb (8K x 8) | - | 100ns | Parallel | 100ns | ||||
STMicroelectronics |
869
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28PCDIP
|
Tube | 4.75 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600",15.24mm) | 28-PCDIP,CAPHAT? | Through Hole | 64Kb (8K x 8) | - | 70ns | Parallel | 70ns | ||||
STMicroelectronics |
584
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28PCDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600",15.24mm) | 28-PCDIP,CAPHAT? | Through Hole | 64Kb (8K x 8) | - | 100ns | Parallel | 100ns | ||||
Maxim Integrated |
163
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600",15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | - | 200ns | Parallel | 200ns | ||||
Maxim Integrated |
253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600",15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | - | 100ns | Parallel | 100ns | ||||
Maxim Integrated |
335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600",15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | - | 100ns | Parallel | 100ns | ||||
Maxim Integrated |
316
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600",15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | - | 120ns | Parallel | 120ns | ||||
Maxim Integrated |
142
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600",15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | - | 150ns | Parallel | 150ns | ||||
Maxim Integrated |
635
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600",15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | - | 120ns | Parallel | 120ns | ||||
Maxim Integrated |
131
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.600",15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | - | 70ns | Parallel | 70ns | ||||
Maxim Integrated |
383
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.600",15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | - | 100ns | Parallel | 100ns | ||||
Maxim Integrated |
179
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 32-DIP Module (0.600",15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | - | 70ns | Parallel | 70ns | ||||
Maxim Integrated |
213
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.600",15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | - | 120ns | Parallel | 120ns | ||||
Maxim Integrated |
344
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.600",15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | - | 70ns | Parallel | 70ns | ||||
Maxim Integrated |
385
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24EDIP
|
Tube | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 24-DIP Module (0.600",15.24mm) | 24-EDIP | Through Hole | 16Kb (2K x 8) | - | 100ns | Parallel | 100ns | ||||
Maxim Integrated |
217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24EDIP
|
Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 24-DIP Module (0.600",15.24mm) | 24-EDIP | Through Hole | 16Kb (2K x 8) | - | 200ns | Parallel | 200ns | ||||
Maxim Integrated |
121
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 16K PARALLEL 24EDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 24-DIP Module (0.600",15.24mm) | 24-EDIP | Through Hole | 16Kb (2K x 8) | - | 200ns | Parallel | 200ns | ||||
Maxim Integrated |
109
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600",15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | - | 150ns | Parallel | 150ns | ||||
Maxim Integrated |
191
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600",15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | - | 150ns | Parallel | 150ns |