Mémoire - Zui Ai Technology（Taiwan）Company.

Voltage - Supply：

Operating Temperature：

Package / Case：

Supplier Device Package：

Memory Size：

Technology：

Memory Format：

Clock Frequency：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Memory Size	Technology	Memory Format	Clock Frequency	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Memory Size	Technology	Memory Format	Clock Frequency	Write Cycle Time - Word, Page
	MT47H128M8BT-5E L:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 92FBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 92FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	92-VFBGA	92-FBGA (11x19)	1Gb (128M x 8)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H32M16CC-5E IT:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-TFBGA	84-FBGA (12x12.5)	512Mb (32M x 16)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H32M16CC-5E L:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-TFBGA	84-FBGA (12x12.5)	512Mb (32M x 16)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H64M8CB-5E IT:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	60-FBGA	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H128M4CB-5E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	60-FBGA	512Mb (128M x 4)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H128M8BT-5E:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 92FBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 92FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	92-VFBGA	92-FBGA (11x19)	1Gb (128M x 8)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H16M16BG-5E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 84FBGA MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 84FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-FBGA	84-FBGA (8x14)	256Mb (16M x 16)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H256M4BT-5E:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 92FBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 92FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	92-VFBGA	92-FBGA (11x19)	1Gb (256M x 4)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H32M16CC-5E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-TFBGA	84-FBGA (12x12.5)	512Mb (32M x 16)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H32M8BP-5E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 256M PARALLEL 60FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	60-FBGA (8x12)	256Mb (32M x 8)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H64M16BT-5E:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 92FBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 92FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	92-VFBGA	92-FBGA (11x19)	1Gb (64M x 16)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H64M8CB-5E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 2000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H256M4B7-5E:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 92FBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 92FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	92-VFBGA	92-FBGA (11x19)	1Gb (256M x 4)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H128M8B7-5E:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 92FBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 92FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	92-VFBGA	92-FBGA (11x19)	1Gb (128M x 8)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H128M8B7-5E L:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 92FBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 92FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	92-VFBGA	92-FBGA (11x19)	1Gb (128M x 8)	SDRAM - DDR2	DRAM	200MHz	15ns
	MT47H64M16B7-5E:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 92FBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 92FBGA	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	92-VFBGA	92-FBGA (11x19)	1Gb (64M x 16)	SDRAM - DDR2	DRAM	200MHz	15ns
	CYDD09S36V18-167BBXC	Cypress Semiconductor Corp	Enquête	-	-	IC SRAM 9M PARALLEL 256FBGA MOQ: 84 MPQ: 1	IC SRAM 9M PARALLEL 256FBGA	1.42 V ~ 1.58 V，1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	256-LBGA	256-FBGA (17x17)	9Mb (128K x 36 x 2)	SRAM - Dual Port，Synchronous	SRAM	167MHz	-
	CYDD09S36V18-167BBXI	Cypress Semiconductor Corp	Enquête	-	-	IC SRAM 9M PARALLEL 256FBGA MOQ: 84 MPQ: 1	IC SRAM 9M PARALLEL 256FBGA	1.42 V ~ 1.58 V，1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	256-LBGA	256-FBGA (17x17)	9Mb (128K x 36 x 2)	SRAM - Dual Port，Synchronous	SRAM	167MHz	-
	CYDD18S36V18-167BBXC	Cypress Semiconductor Corp	Enquête	-	-	IC SRAM 18M PARALLEL 256FBGA MOQ: 84 MPQ: 1	IC SRAM 18M PARALLEL 256FBGA	1.42 V ~ 1.58 V，1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	256-LBGA	256-FBGA (17x17)	18Mb (256K x 36 x 2)	SRAM - Dual Port，Synchronous	SRAM	167MHz	-
	CYDD18S36V18-167BBXI	Cypress Semiconductor Corp	Enquête	-	-	IC SRAM 18M PARALLEL 256FBGA MOQ: 84 MPQ: 1	IC SRAM 18M PARALLEL 256FBGA	1.42 V ~ 1.58 V，1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	256-LBGA	256-FBGA (17x17)	18Mb (256K x 36 x 2)	SRAM - Dual Port，Synchronous	SRAM	167MHz	-

Envoyé avec succès!