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Découvrez les produits 43
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Memory Size Technology Memory Format Clock Frequency Write Cycle Time - Word, Page
MT47H256M4HQ-5E:E TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 60FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-FBGA 60-FBGA (8x11.5) 1Gb (256M x 4) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H256M4HQ-5E:E TR
Micron Technology Inc.
950
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 60FBGA
Cut Tape (CT) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-FBGA 60-FBGA (8x11.5) 1Gb (256M x 4) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H128M8BT-5E L:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 92FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 92-VFBGA 92-FBGA (11x19) 1Gb (128M x 8) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H32M16CC-5E IT:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
Tray 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-TFBGA 84-FBGA (12x12.5) 512Mb (32M x 16) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H32M16CC-5E IT:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 84-TFBGA 84-FBGA (12x12.5) 512Mb (32M x 16) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H32M16CC-5E L:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-TFBGA 84-FBGA (12x12.5) 512Mb (32M x 16) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H32M16CC-5E L:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-TFBGA 84-FBGA (12x12.5) 512Mb (32M x 16) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H64M8CB-5E IT:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 60-FBGA 60-FBGA 512Mb (64M x 8) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H64M8CB-5E IT:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 60FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 60-FBGA 60-FBGA 512Mb (64M x 8) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H128M4CB-5E:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-FBGA 60-FBGA 512Mb (128M x 4) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H128M4CB-5E:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 60FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-FBGA 60-FBGA 512Mb (128M x 4) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H128M8BT-5E:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 92FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 92-VFBGA 92-FBGA (11x19) 1Gb (128M x 8) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H16M16BG-5E:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 256M PARALLEL 84FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-FBGA 84-FBGA (8x14) 256Mb (16M x 16) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H16M16BG-5E:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 256M PARALLEL 84FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-FBGA 84-FBGA (8x14) 256Mb (16M x 16) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H256M4BT-5E:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 92FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 92-VFBGA 92-FBGA (11x19) 1Gb (256M x 4) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H32M16CC-5E:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-TFBGA 84-FBGA (12x12.5) 512Mb (32M x 16) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H32M16CC-5E:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 84FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 84-TFBGA 84-FBGA (12x12.5) 512Mb (32M x 16) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H32M8BP-5E:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 256M PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-FBGA 60-FBGA (8x12) 256Mb (32M x 8) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H32M8BP-5E:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 256M PARALLEL 60FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-FBGA 60-FBGA (8x12) 256Mb (32M x 8) SDRAM - DDR2 DRAM 200MHz 15ns
MT47H64M16BT-5E:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 92FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 92-VFBGA 92-FBGA (11x19) 1Gb (64M x 16) SDRAM - DDR2 DRAM 200MHz 15ns