- Voltage - Supply:
-
- Operating Temperature:
-
- Logic Level - Low:
-
- Logic Level - High:
-
- Current - Output High, Low:
-
- Max Propagation Delay @ V, Max CL:
-
- Conditions sélectionnées:
Découvrez les produits 10
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Features | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Features | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 4CH 2-INP 16DIP
|
74F | 4.5 V ~ 5.5 V | 0°C ~ 70°C | Open Collector | NAND Gate | 0.8V | 2V | -,160mA | 11.5ns @ 5V,50pF | ||||
NXP USA Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 4CH 2-INP 16DIP
|
74F | 4.5 V ~ 5.5 V | 0°C ~ 70°C | - | NAND Gate | 0.8V | 2.4V | 67mA,160mA | 5ns @ 5V,50pF | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC GATE NOR 4CH 2-INP 16DIP
|
10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | Strobe | NOR Gate | -1.48V | -1.13V | 50mA,50mA | 1.7ns @ -5.2V,- | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC GATE NOR 4CH 2-INP 16DIP
|
10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | Strobe | NOR Gate | -1.48V | -1.13V | 50mA,50mA | 1.7ns @ -5.2V,- | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC GATE NOR 4CH 2-INP 16DIP
|
10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 1 of 4 OR/NOR Output | NOR Gate | -1.48V | -1.13V | 50mA,50mA | 1.25ns @ -5.2V,- | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC GATE OR 4CH 2-INP 16DIP
|
10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 1 of 4 OR/NOR Output | OR Gate | -1.48V | -1.13V | 50mA,50mA | 1.3ns @ -5.2V,- | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC GATE XOR 4CH 2-INP 16DIP
|
10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | - | XOR (Exclusive OR) | -1.48V | -1.13V | 50mA,50mA | 1.8ns @ -5.2V,- | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC GATE XOR 4CH 2-INP 16DIP
|
10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | - | XOR (Exclusive OR) | -1.48V | -1.13V | 50mA,50mA | 1.8ns @ -5.2V,- | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC GATE AND 4CH 2-INP 16DIP
|
10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 1 of 4 AND/NAND Output | AND Gate | -1.48V | -1.13V | 50mA,50mA | 1.75ns @ -5.2V,- | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC GATE AND 4CH 2-INP 16DIP
|
10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 1 of 4 AND/NAND Output | AND Gate | -1.48V | -1.13V | 50mA,50mA | 1.75ns @ -5.2V,- |