- Voltage - Supply：
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- Operating Temperature：
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- Features：
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- Logic Level - Low：
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- Logic Level - High：
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- Current - Output High, Low：
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- Max Propagation Delay @ V, Max CL：
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- Conditions sélectionnées:
Découvrez les produits 25
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Number of Circuits | Features | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Number of Circuits | Features | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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NXP USA Inc. |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC GATE NAND 4CH 2-INP 16DIP
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74F | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 4 | Open Collector | 2 | - | NAND Gate | 0.8V | 2V | -，160mA | 11.5ns @ 5V，50pF | ||
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STMicroelectronics |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC INVERTER 6CH 6-INP 16DIP
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74HC | 2 V ~ 6 V | -55°C ~ 125°C | 6 | - | 6 | 1μA | Inverter | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 17ns @ 6V，150pF | ||
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NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE NAND 4CH 2-INP 16DIP
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74F | 4.5 V ~ 5.5 V | 0°C ~ 70°C | 4 | - | 2 | - | NAND Gate | 0.8V | 2.4V | 67mA，160mA | 5ns @ 5V，50pF | ||
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NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC INVERTER 6CH 6-INP 16DIP
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4000B | 3 V ~ 15 V | -40°C ~ 85°C | 6 | - | 6 | 16μA | Inverter | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 3mA，20mA | 40ns @ 15V，50pF | ||
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STMicroelectronics |
Enquête
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- |
-
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MOQ: 5000 MPQ: 1
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IC INVERTER 6CH 6-INP 16DIP
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4000B | 3 V ~ 20 V | -55°C ~ 125°C | 6 | - | 6 | 20μA | Inverter | 1 V ~ 3 V | 4 V ~ 12 V | 12mA，48mA | 50ns @ 15V，50pF | ||
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STMicroelectronics |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC GATE NAND 1CH 13-INP 16DIP
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74HC | 2 V ~ 6 V | -55°C ~ 125°C | 1 | - | 13 | 1μA | NAND Gate | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 22ns @ 6V，50pF | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1500 MPQ: 1
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IC INVERTER 6CH 6-INP 16DIP
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4000B | 3 V ~ 18 V | -55°C ~ 125°C | 6 | - | 6 | 4μA | Inverter | 1.5 V ~ 4 V | 3.5 V ~ 11 V | 10mA，40mA | 60ns @ 15V，50pF | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC GATE NOR 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 4 | Strobe | 2 | - | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 1.7ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC GATE NOR 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 4 | Strobe | 2 | - | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 1.7ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC GATE NOR 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 4 | 1 of 4 OR/NOR Output | 2 | - | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 1.25ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC GATE OR 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 4 | 1 of 4 OR/NOR Output | 2 | - | OR Gate | -1.48V | -1.13V | 50mA，50mA | 1.3ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC GATE NOR 3CH 4/3/3-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 3 | - | 4，3，3 | - | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 1.5ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC GATE NOR 3CH 4/3/3-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 3 | - | 4，3，3 | - | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 1.5ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC GATE XOR 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 4 | - | 2 | - | XOR (Exclusive OR) | -1.48V | -1.13V | 50mA，50mA | 1.8ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC GATE XOR 4CH 2-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 4 | - | 2 | - | XOR (Exclusive OR) | -1.48V | -1.13V | 50mA，50mA | 1.8ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC GATE OR 2CH 3-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 2 | 3 Outputs | 3 | - | OR Gate | -1.48V | -1.13V | 50mA，50mA | 1.55ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 75 MPQ: 1
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IC GATE OR 2CH 3-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 2 | 3 Outputs | 3 | - | OR Gate | -1.48V | -1.13V | 50mA，50mA | 1.55ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC GATE NOR 2CH 3-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 2 | 3 Outputs | 3 | - | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 2ns @ -5.2V，- | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 75 MPQ: 1
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IC GATE NOR 2CH 3-INP 16DIP
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10H | -4.94 V ~ -5.46 V | 0°C ~ 75°C | 2 | 3 Outputs | 3 | - | NOR Gate | -1.48V | -1.13V | 50mA，50mA | 2ns @ -5.2V，- | ||
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NXP USA Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC INVERTER 6CH 6-INP 16DIP
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74HC | 2 V ~ 6 V | -40°C ~ 125°C | 6 | - | 6 | 2μA | Inverter | 0.5 V ~ 1.8 V | 1.5 V ~ 4.2 V | 5.2mA，5.2mA | 14ns @ 6V，50pF |
