Vishay Semiconductor Diodes Division

S07J-GS08

Description :
DIODE GEN PURP 600V 1.5A DO219AB
Forfait :
DO-219AB (SMF)
Capacitance @ Vr,F :
4pF @ 4V,1MHz
Current - Average Rectified (Io) :
1.5A
Current - Reverse Leakage @ Vr :
10μA @ 600V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-219AB
Packaging :
Cut Tape (CT)
Reverse Recovery Time (trr) :
1.8μs
Series :
-
Speed :
Standard Recovery >500ns,> 200mA (Io)
Supplier Device Package :
DO-219AB (SMF)
Voltage - DC Reverse (Vr) (Max) :
600V
Voltage - Forward (Vf) (Max) @ If :
1.1V @ 1A

Produits similaires