Toshiba Semiconductor and Storage

SSM6L09FUTE85LF

Description :
MOSFET N/P-CH 30V 0.4A/0.2A US6
Forfait :
US6
Current - Continuous Drain (Id) @ 25°C :
400mA,200mA
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
20pF @ 5V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
6-TSSOP,SC-88,SOT-363
Packaging :
Cut Tape (CT)
Power - Max :
300mW
Rds On (Max) @ Id,Vgs :
700 mOhm @ 200MA,10V
Series :
-
Supplier Device Package :
US6
Vgs(th) (Max) @ Id :
1.8V @ 100μA

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