EMD30T2R
- Description :
- TRANS NPN/PNP PREBIAS 0.15W EMT6
- Forfait :
- EMT6
- Cette partie est conforme à RoHS
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- Current - Collector (Ic) (Max) :
- 100mA,200mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic,Vce :
- 30 @ 5mA,5V / 140 @ 100mA,2V
- Frequency - Transition :
- 250MHz,260MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563,SOT-666
- Packaging :
- -
- Power - Max :
- 150mW
- Resistor - Base (R1) :
- 10 kOhms,1 kOhms
- Resistor - Emitter Base (R2) :
- 10 kOhms
- Series :
- -
- Supplier Device Package :
- EMT6
- Transistor Type :
- 1 NPN,1 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib,Ic :
- 300mV @ 500μA,10mA / 300mV @ 2.5mA,50mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V,30V