ROHM Semiconductor

BSM080D12P2C008

Description :
SIC POWER MODULE-1200V-80A
Forfait :
Module
Current - Continuous Drain (Id) @ 25°C :
80A
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 10V
Mounting Type :
Chassis Mount
Operating Temperature :
175°C (TJ)
Package / Case :
Module
Packaging :
Tray
Power - Max :
600W
Rds On (Max) @ Id,Vgs :
-
Series :
-
Supplier Device Package :
Module
Vgs(th) (Max) @ Id :
4V @ 13.2mA

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