ON Semiconductor

EFC6601R-TR

Description :
MOSFET 2N-CH EFCP
Forfait :
EFCP2718-6CE-020
Current - Continuous Drain (Id) @ 25°C :
-
Drain to Source Voltage (Vdss) :
-
FET Feature :
Logic Level Gate,2.5V Drive
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
6-XFBGA,FCBGA
Packaging :
-
Power - Max :
2W
Rds On (Max) @ Id,Vgs :
-
Series :
-
Supplier Device Package :
EFCP2718-6CE-020
Vgs(th) (Max) @ Id :
-

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