Nexperia USA Inc.

PHC21025,118

Description :
MOSFET N/P-CH 30V 8SOIC
Forfait :
8-SO
Current - Continuous Drain (Id) @ 25°C :
3.5A,2.3A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 20V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
8-SOIC (0.154",3.90mm Width)
Packaging :
-
Power - Max :
2W
Rds On (Max) @ Id,Vgs :
100 mOhm @ 2.2A,10V
Series :
-
Supplier Device Package :
8-SO
Vgs(th) (Max) @ Id :
2.8V @ 1mA

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