Diodes Incorporated

DMG6602SVT-7

Description :
MOSFET N/P-CH 30V TSOT23-6
Forfait :
TSOT-23-6
Current - Continuous Drain (Id) @ 25°C :
3.4A,2.8A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
SOT-23-6 Thin,TSOT-23-6
Packaging :
-
Power - Max :
840mW
Rds On (Max) @ Id,Vgs :
60 mOhm @ 3.1A,10V
Series :
-
Supplier Device Package :
TSOT-23-6
Vgs(th) (Max) @ Id :
2.3V @ 250μA

Produits similaires