Diodes Incorporated

DMG6601LVT-7

Description :
MOSFET N/P-CH 30V 26TSOT
Forfait :
TSOT-26
Current - Continuous Drain (Id) @ 25°C :
3.8A,2.5A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
422pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
SOT-23-6 Thin,TSOT-23-6
Packaging :
Cut Tape (CT)
Power - Max :
850mW
Rds On (Max) @ Id,Vgs :
55 mOhm @ 3.4A,10V
Series :
-
Supplier Device Package :
TSOT-26
Vgs(th) (Max) @ Id :
1.5V @ 250μA

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