AON5810

Description :
MOSFET 2N-CH 20V 7.7A 6DFN
Forfait :
6-DFN-EP (2x5)
Current - Continuous Drain (Id) @ 25°C :
7.7A
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual) Common Drain
Gate Charge (Qg) (Max) @ Vgs :
13.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1360pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
6-SMD,Flat Lead Exposed Pad
Packaging :
Tape & Reel (TR)
Power - Max :
1.6W
Rds On (Max) @ Id,Vgs :
18 mOhm @ 7.7A,4.5V
Series :
-
Supplier Device Package :
6-DFN-EP (2x5)
Vgs(th) (Max) @ Id :
1V @ 250μA

Produits similaires