AON5810
- Description :
- MOSFET 2N-CH 20V 7.7A 6DFN
- Forfait :
- 6-DFN-EP (2x5)
- Cette partie est conforme à RoHS
- Fiche technique (1)
- Ajouter aux favoris
- Ajouter pour comparer
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual) Common Drain
- Gate Charge (Qg) (Max) @ Vgs :
- 13.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1360pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-SMD,Flat Lead Exposed Pad
- Packaging :
- Tape & Reel (TR)
- Power - Max :
- 1.6W
- Rds On (Max) @ Id,Vgs :
- 18 mOhm @ 7.7A,4.5V
- Series :
- -
- Supplier Device Package :
- 6-DFN-EP (2x5)
- Vgs(th) (Max) @ Id :
- 1V @ 250μA