AO4612

Description :
MOSFET N/P-CH 60V 8-SOIC
Forfait :
8-SOIC
Current - Continuous Drain (Id) @ 25°C :
4.5A,3.2A
Drain to Source Voltage (Vdss) :
60V
FET Feature :
Logic Level Gate
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
540pF @ 30V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-SOIC (0.154",3.90mm Width)
Packaging :
Cut Tape (CT)
Power - Max :
2W
Rds On (Max) @ Id,Vgs :
56 mOhm @ 4.5A,10V
Series :
-
Supplier Device Package :
8-SOIC
Vgs(th) (Max) @ Id :
3V @ 250μA

Produits similaires