Fabricant:
Voltage - Supply:
Operating Temperature:
Supplier Device Package:
Impedance:
Circuit:
Topology:
Frequency - Lower:
Frequency - Upper:
Découvrez les produits 4
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Package / Case Supplier Device Package Impedance Circuit Topology P1dB RF Type Frequency - Lower Frequency - Upper Insertion Loss @ Frequency IIP3
BGSX28MA18E6327XTSA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
CMOS SWITCH
2.5 V ~ 3.4 V -30°C ~ 85°C 18-UFQFN Exposed Pad PG-ATSLP-18 50 Ohm DP3T - - LTE 100MHz 3.8GHz 0.9dB @ 3.5GHz -
BGSX210MA18E6327XTSA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
CMOS SWITCH
2.5 V ~ 3.4 V -30°C ~ 85°C 18-UFQFN Exposed Pad PG-ATSLP-18 - - - - LTE 100MHz 3.8GHz 0.65dB @ 2.7GHz -
BGSX212MA18E6327XTSA1
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
CMOS SWITCH
2.5 V ~ 3.4 V -30°C ~ 85°C 18-UFQFN Exposed Pad PG-ATSLP-18 50 Ohm - - - LTE 100MHz 3.8GHz 0.9dB @ 3.5GHz -
HRF-SW1020-FL-TR
Honeywell Microelectronics & Precision Sensors
Enquête
-
-
MOQ: 1  MPQ: 1
IC SWITCH RF SP4T 50 OHM 20VQFN
3.3 V ~ 5.5 V -40°C ~ 85°C 20-LCC Exposed Pad 20-LPCC 50 Ohm SP4T Absorptive 27dBm (typ) IP1dB Cellular,PCS,GSM,WLL DC 2.5GHz 1.8dB @ 2.5GHz 36dBm (typ)