- Packaging：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Output Type：
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- Fault Protection：
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- Rds On (Typ)：
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Découvrez les produits 49
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Output Type | Number of Outputs | Fault Protection | Rds On (Typ) | Current - Output (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Output Type | Number of Outputs | Fault Protection | Rds On (Typ) | Current - Output (Max) | |
|
|
|
Vishay Siliconix |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC LOAD SWITCH 4TDFN
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 4-UFDFN Exposed Pad | 4-TDFN (1.2x1.6) | N-Channel | 1 | Reverse Current | 44 mOhm | 3.5A | ||
|
|
|
Vishay Siliconix |
5,199
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC LOAD SWITCH 4TDFN
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | 4-UFDFN Exposed Pad | 4-TDFN (1.2x1.6) | N-Channel | 1 | Reverse Current | 44 mOhm | 3.5A | ||
|
|
|
Vishay Siliconix |
5,199
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC LOAD SWITCH 4TDFN
|
- | -40°C ~ 125°C (TJ) | 4-UFDFN Exposed Pad | 4-TDFN (1.2x1.6) | N-Channel | 1 | Reverse Current | 44 mOhm | 3.5A | ||
|
|
|
Vishay Siliconix |
27,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC SW W/CTRL SLEW RATE 4TDFN
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 4-UFDFN Exposed Pad | 4-TDFN (1.2x1.6) | N-Channel | 1 | Reverse Current | 62 mOhm | 2.4A | ||
|
|
|
Vishay Siliconix |
28,350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SW W/CTRL SLEW RATE 4TDFN
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | 4-UFDFN Exposed Pad | 4-TDFN (1.2x1.6) | N-Channel | 1 | Reverse Current | 62 mOhm | 2.4A | ||
|
|
|
Vishay Siliconix |
28,350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SW W/CTRL SLEW RATE 4TDFN
|
- | -40°C ~ 125°C (TJ) | 4-UFDFN Exposed Pad | 4-TDFN (1.2x1.6) | N-Channel | 1 | Reverse Current | 62 mOhm | 2.4A | ||
|
|
|
Vishay Siliconix |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC LOAD SWITCH SOT23-6
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | TSOT-23-6 | N-Channel | 1 | Reverse Current | 46 mOhm | 3A | ||
|
|
|
Vishay Siliconix |
10,984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC LOAD SWITCH SOT23-6
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | TSOT-23-6 | N-Channel | 1 | Reverse Current | 46 mOhm | 3A | ||
|
|
|
Vishay Siliconix |
10,984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC LOAD SWITCH SOT23-6
|
- | -40°C ~ 125°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | TSOT-23-6 | N-Channel | 1 | Reverse Current | 46 mOhm | 3A | ||
|
|
|
Vishay Siliconix |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC SW W/CTRL SLEW RATE 8TDFN
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | 8-UFDFN Exposed Pad | 8-TDFN (2x2) | N-Channel | 2 | Reverse Current | 62 mOhm | 2.4A | ||
|
|
|
Vishay Siliconix |
8,199
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SW W/CTRL SLEW RATE 8TDFN
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | 8-UFDFN Exposed Pad | 8-TDFN (2x2) | N-Channel | 2 | Reverse Current | 62 mOhm | 2.4A | ||
|
|
|
Vishay Siliconix |
8,199
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SW W/CTRL SLEW RATE 8TDFN
|
- | -40°C ~ 125°C (TJ) | 8-UFDFN Exposed Pad | 8-TDFN (2x2) | N-Channel | 2 | Reverse Current | 62 mOhm | 2.4A | ||
|
|
|
Vishay Siliconix |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC LOAD SWITCH SOT23-6
|
Tape & Reel (TR) | -40°C ~ 125°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | TSOT-23-6 | N-Channel | 1 | Reverse Current | 46 mOhm | 3A | ||
|
|
|
Vishay Siliconix |
38
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC LOAD SWITCH SOT23-6
|
Cut Tape (CT) | -40°C ~ 125°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | TSOT-23-6 | N-Channel | 1 | Reverse Current | 46 mOhm | 3A | ||
|
|
|
Vishay Siliconix |
38
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC LOAD SWITCH SOT23-6
|
- | -40°C ~ 125°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | TSOT-23-6 | N-Channel | 1 | Reverse Current | 46 mOhm | 3A | ||
|
|
Toshiba Semiconductor and Storage |
5,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC POWER DIST LOAD SWITCH 4WCSP
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 4-UFBGA，WLCSP | 4-WCSPD (0.79x0.79) | P-Channel | 1 | - | 34 mOhm | 1A | |||
|
|
Toshiba Semiconductor and Storage |
7,766
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC POWER DIST LOAD SWITCH 4WCSP
|
Cut Tape (CT) | -40°C ~ 85°C (TA) | 4-UFBGA，WLCSP | 4-WCSPD (0.79x0.79) | P-Channel | 1 | - | 34 mOhm | 1A | |||
|
|
Toshiba Semiconductor and Storage |
7,766
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC POWER DIST LOAD SWITCH 4WCSP
|
- | -40°C ~ 85°C (TA) | 4-UFBGA，WLCSP | 4-WCSPD (0.79x0.79) | P-Channel | 1 | - | 34 mOhm | 1A | |||
|
|
Toshiba Semiconductor and Storage |
5,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC PWR SWITCH P-CHAN 1:1 WCSP6E
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 6-UFBGA，WLCSP | 6-WCSPE (0.80x1.2) | P-Channel | 1 | Reverse Current | 25 mOhm | 2A | |||
|
|
Toshiba Semiconductor and Storage |
5,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR SWITCH P-CHAN 1:1 WCSP6E
|
Cut Tape (CT) | -40°C ~ 85°C (TA) | 6-UFBGA，WLCSP | 6-WCSPE (0.80x1.2) | P-Channel | 1 | Reverse Current | 25 mOhm | 2A |
