Découvrez les produits 23
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Features Output Type Number of Outputs Output Configuration Rds On (Typ) Voltage - Load Current - Output (Max)
SI3865DDV-T1-GE3
Vishay Siliconix
Enquête
-
-
MOQ: 3000  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6TSOP
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 45 mOhm 1.5 V ~ 12 V 2.8A
SI3865DDV-T1-GE3
Vishay Siliconix
Enquête
-
-
MOQ: 1  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6TSOP
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 45 mOhm 1.5 V ~ 12 V 2.8A
SI3865DDV-T1-GE3
Vishay Siliconix
Enquête
-
-
MOQ: 1  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6TSOP
- TrenchFET -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 45 mOhm 1.5 V ~ 12 V 2.8A
SI3861BDV-T1-E3
Vishay Siliconix
Enquête
-
-
MOQ: 3000  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6-TSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 60 mOhm 4.5 V ~ 20 V 2.3A
SI3861BDV-T1-E3
Vishay Siliconix
Enquête
-
-
MOQ: 1  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6-TSOP
Cut Tape (CT) - -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 60 mOhm 4.5 V ~ 20 V 2.3A
SI3861BDV-T1-E3
Vishay Siliconix
Enquête
-
-
MOQ: 1  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6-TSOP
- - -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 60 mOhm 4.5 V ~ 20 V 2.3A
SI3865BDV-T1-E3
Vishay Siliconix
Enquête
-
-
MOQ: 3000  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6-TSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 45 mOhm 1.8 V ~ 8 V 2.9A
SI3865BDV-T1-E3
Vishay Siliconix
Enquête
-
-
MOQ: 1  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6-TSOP
Cut Tape (CT) - -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 45 mOhm 1.8 V ~ 8 V 2.9A
SI3865BDV-T1-E3
Vishay Siliconix
Enquête
-
-
MOQ: 1  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6-TSOP
- - -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 45 mOhm 1.8 V ~ 8 V 2.9A
SI3831DV-T1-E3
Vishay Siliconix
Enquête
-
-
MOQ: 3000  MPQ: 1
IC PWR SW BI-DIR PCHAN 6TSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) - P-Channel 1 High Side 130 mOhm 2.5 V ~ 5.5 V 2.4A
SI3831DV-T1-GE3
Vishay Siliconix
Enquête
-
-
MOQ: 3000  MPQ: 1
IC PWR SW BI-DIR PCHAN 6TSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) - P-Channel 1 High Side 130 mOhm 2.5 V ~ 5.5 V 2.4A
SI3861BDV-T1-GE3
Vishay Siliconix
Enquête
-
-
MOQ: 3000  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6-TSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 60 mOhm 4.5 V ~ 20 V 2.3A
SI3865BDV-T1-GE3
Vishay Siliconix
Enquête
-
-
MOQ: 3000  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6-TSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 45 mOhm 1.8 V ~ 8 V 2.9A
SI3865CDV-T1-E3
Vishay Siliconix
Enquête
-
-
MOQ: 3000  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6-TSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 50 mOhm 1.8 V ~ 12 V 2.8A
SI3865CDV-T1-GE3
Vishay Siliconix
Enquête
-
-
MOQ: 3000  MPQ: 1
IC LOAD SWITCH LVL SHIFT 6-TSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) Slew Rate Controlled P-Channel 1 High Side 50 mOhm 1.8 V ~ 12 V 2.8A
NTGD1100LT1G
ON Semiconductor
6,000
3 jours
-
MOQ: 3000  MPQ: 1
MOSFET N/P-CH 8V 3.3A 6-TSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) - P-Channel 1 High Side 40 mOhm 1.8 V ~ 8 V 3.3A
NTGD1100LT1G
ON Semiconductor
14,444
3 jours
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 8V 3.3A 6-TSOP
Cut Tape (CT) - -55°C ~ 150°C (TJ) - P-Channel 1 High Side 40 mOhm 1.8 V ~ 8 V 3.3A
NTGD1100LT1G
ON Semiconductor
14,444
3 jours
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 8V 3.3A 6-TSOP
- - -55°C ~ 150°C (TJ) - P-Channel - High Side 40 mOhm 1.8 V ~ 8 V 3.3A
NUD3048MT1
ON Semiconductor
Enquête
-
-
MOQ: 3000  MPQ: 1
IC FET SW N-CH 100V ESD 6TSOP
Tape & Reel (TR) - - - N-Channel 1 Low Side 600 mOhm - 700mA
NUD3048MT1
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC FET SW N-CH 100V ESD 6TSOP
Cut Tape (CT) - - - N-Channel 1 Low Side 600 mOhm - 700mA