- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 248
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR 9A LOSIDE 8-DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，3.5V | 9A，9A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR 9A LOSIDE TO263-5
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，3.5V | 9A，9A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC DRIVER MOSF/IGBT 14A 8-DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，20ns | 0.8V，3.5V | 14A，14A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC DRIVER MOSF/IGBT 14A 14-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，20ns | 0.8V，3.5V | 14A，14A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC DRIVER MOSF/IGBT 14A TO263-5
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，20ns | 0.8V，3.5V | 14A，14A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC DRVR MOSF/IGBT 30A TO263-5
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Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC DRVR MOSF/IGBT 30A TO263-5
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Bulk | - | 8.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263 (D2Pak) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 18ns，16ns | 0.8V，3.5V | 30A，30A | ||
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IXYS |
Enquête
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-
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MOQ: 94 MPQ: 1
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IC GATE DRIVER DUAL 2A 8-SOIC
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER DUAL 4A 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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-
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MOQ: 94 MPQ: 1
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IC GATE DRIVER DUAL 4A 8-SOIC
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC GATE DRIVER DUAL 4A 8-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER SGL 9A 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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IXYS |
Enquête
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-
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MOQ: 94 MPQ: 1
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IC GATE DRIVER SGL 9A 8-SOIC
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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IXYS |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC GATE DRIVER SGL 9A 8-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER SGL 14A 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 1V，2.5V | 14A，14A | ||
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IXYS |
Enquête
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MOQ: 94 MPQ: 1
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IC GATE DRIVER SGL 14A 8-SOIC
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 1V，2.5V | 14A，14A | ||
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IXYS |
Enquête
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-
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MOQ: 2500 MPQ: 1
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IC GATE DRIVER SGL 14A 8-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 1V，2.5V | 14A，14A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR DUAL 2A 8-DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 8ns，8ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR DUAL 2A 8-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 8ns，8ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
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-
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MOQ: 94 MPQ: 1
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IC MOSFET DRVR DUAL 2A 8-SOIC
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 8ns，8ns | 0.8V，3V | 2A，2A |
