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Découvrez les produits 25
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
BS2100F-E2
ROHM Semiconductor
2,188
3 jours
-
MOQ: 1  MPQ: 1
IC DVR IGBT/MOSFET
- - 10 V ~ 18 V -40°C ~ 150°C (TJ) 8-SOIC (0.173",4.40mm Width) 8-SOP Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 600V 200ns,100ns 1V,2.6V 60mA,130mA
BS2101F-E2
ROHM Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
600V HIGH VOLTAGE HIGH & LOW-SID
Tape & Reel (TR) - - - 8-SOIC (0.173",4.40mm Width) 8-SOP - - - - - - - - -
BS2101F-E2
ROHM Semiconductor
21
3 jours
-
MOQ: 1  MPQ: 1
600V HIGH VOLTAGE HIGH & LOW-SID
Cut Tape (CT) - - - 8-SOIC (0.173",4.40mm Width) 8-SOP - - - - - - - - -
BS2101F-E2
ROHM Semiconductor
21
3 jours
-
MOQ: 1  MPQ: 1
600V HIGH VOLTAGE HIGH & LOW-SID
- - - - 8-SOIC (0.173",4.40mm Width) 8-SOP - - - - - - - - -
BM6103FV-CE2
ROHM Semiconductor
Enquête
-
-
MOQ: 0  MPQ: 1
1 CHANNEL GATE DRIVER 20-PIN SSO
Bulk - 4.5 ~ 5.5 V -40°C ~ 150°C (TJ) 20-LSSOP (0.240",6.10mm Width) 20-SSOP-B Inverting,Non-Inverting - Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 50ns,50ns - -