- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 773
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
ON Semiconductor |
2,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IGBT GATE DRIVER
|
- | Automotive，AEC-Q100 | 20V | -40°C ~ 125°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | - | IGBT | - | 9.2ns，7.9ns | 0.75V，4.3V | 7.8A，6.8A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
SIC MOSFET DRIVER
|
Tape & Reel (TR) | - | 10 V ~ 22 V | -55°C ~ 150°C (TJ) | 24-VFQFN Exposed Pad | 24-QFN (4x4) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | SiC MOSFET | - | 8ns，8ns | - | 6A，6A | |||
|
|
ON Semiconductor |
2,798
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SIC MOSFET DRIVER
|
Cut Tape (CT) | - | 10 V ~ 22 V | -55°C ~ 150°C (TJ) | 24-VFQFN Exposed Pad | 24-QFN (4x4) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | SiC MOSFET | - | 8ns，8ns | - | 6A，6A | |||
|
|
ON Semiconductor |
2,798
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SIC MOSFET DRIVER
|
- | - | 10 V ~ 22 V | -55°C ~ 150°C (TJ) | 24-VFQFN Exposed Pad | 24-QFN (4x4) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | SiC MOSFET | - | 8ns，8ns | - | 6A，6A | |||
|
|
ON Semiconductor |
223
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8SOIC
|
Tube | - | 6.1 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 36ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
737
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8SOIC
|
Tube | - | 6.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 31ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
456
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8DIP
|
Tube | - | 6.1 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 36ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
299
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8DIP
|
Tube | - | 6.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 31ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
276
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8SOIC
|
Tube | - | 6.1 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 36ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
408
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-DIP
|
Tube | - | 6.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 31ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
481
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE SINGLE IGBT 8SOIC
|
Tube | - | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A | |||
|
|
ON Semiconductor |
158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HIGH VOLT 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.3V | 1.4A，2.2A | |||
|
|
ON Semiconductor |
521
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8DIP
|
Tube | - | 6.1 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 36ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
645
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Tube | - | 6.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 31ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 4000 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
970
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
970
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VDFN Exposed Pad | 10-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER GATE SINGLE IGBT 8SOIC
|
Tape & Reel (TR) | - | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A | |||
|
|
ON Semiconductor |
401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE SINGLE IGBT 8SOIC
|
Cut Tape (CT) | - | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A | |||
|
|
ON Semiconductor |
401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE SINGLE IGBT 8SOIC
|
- | - | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A |
