- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 1,511
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
248
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 9A INV 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 38ns,33ns | 0.8V,2.4V | 10A,10A | ||||
Microchip Technology |
1,608
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 100V TTL 8SOIC
|
Tube | - | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 330ns,200ns | 0.8V,2.2V | 2A,3A | ||||
Microchip Technology |
1,717
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF 12A LO SIDE 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 0.8V,2.4V | 12A,12A | ||||
Microchip Technology |
7,055
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 12A HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 30ns,32ns | 0.8V,2.4V | 13A,13A | ||||
Microchip Technology |
1,355
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 12A HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 30ns,32ns | 0.8V,2.4V | 13A,13A | ||||
Microchip Technology |
377
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 38ns,33ns | 0.8V,2.4V | 10A,10A | ||||
Microchip Technology |
1,749
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 100V TTL 8-SOIC
|
Tube | - | 9 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 10ns,6ns | 0.8V,2.2V | 2A,3A | ||||
Microchip Technology |
1,060
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LOSIDE 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 9A INV TO220-5
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 38ns,33ns | 0.8V,2.4V | 10A,10A | ||||
Microchip Technology |
845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 9A NON-INV TO220-5
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 38ns,33ns | 0.8V,2.4V | 10A,10A | ||||
Microchip Technology |
1,249
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 30V 1.5A 8-SOIC
|
Tube | - | 4.5 V ~ 30 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,33ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
1,037
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 12A HS TO220-5
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Through Hole | Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 0.8V,2.4V | 12A,12A | ||||
Microchip Technology |
1,444
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 30V 1.5A 8-SOIC
|
Tube | - | 4.5 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,33ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
2,600
|
3 jours |
-
|
MOQ: 2600 MPQ: 1
|
IC RELAY DRIVER 16SOIC
|
Tape & Reel (TR) | - | 10 V ~ 450 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154",3.90mm Width),14 Leads | 16-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 30ns,30ns | - | - | ||||
Microchip Technology |
4,582
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC RELAY DRIVER 16SOIC
|
Cut Tape (CT) | - | 10 V ~ 450 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154",3.90mm Width),14 Leads | 16-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 30ns,30ns | - | - | ||||
Microchip Technology |
4,582
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC RELAY DRIVER 16SOIC
|
- | - | 10 V ~ 450 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154",3.90mm Width),14 Leads | 16-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 30ns,30ns | - | - | ||||
Microchip Technology |
334
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HI SIDE HS 8DIP
|
Tube | - | 12 V ~ 36 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | - | 400ns,400ns | 0.8V,2V | - | ||||
Microchip Technology |
791
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVR MOSF 12A LOSIDE TO220-5
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 0.8V,2.4V | 12A,12A | ||||
Microchip Technology |
226
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 14ns,13ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
1,293
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A |