- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,511
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
Enquête
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-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 9A LOSIDE 8SOIC
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- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 20ns，24ns | 0.8V，2.4V | 9A，9A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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MOSFET DRVR 1.5A SGL HS 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x3) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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MOSFET DRVR 1.5A SGL HS 8DFN
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x3) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 3A L-SIDE 8SOIC
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Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 3A L-SIDE 8SOIC
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- | Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 3A L-SIDE 8SOIC
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Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 3A L-SIDE 8SOIC
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- | Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 3A L-SIDE 8SOIC
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Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 3A L-SIDE 8SOIC
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- | Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC MOSFET DVR 32V NONINV 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 32V NONINV 8SOIC
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Cut Tape (CT) | - | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 32V NONINV 8SOIC
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- | - | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 32V NONINV 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 32V NONINV 8SOIC
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Cut Tape (CT) | - | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 32V NONINV 8SOIC
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- | - | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 32V INV 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 32V INV 8SOIC
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Cut Tape (CT) | - | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 32V INV 8SOIC
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- | - | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC MOSFET DVR 32V NONINV 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 32V NONINV 8SOIC
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Cut Tape (CT) | - | 4.5 V ~ 32 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 120ns，45ns | 0.8V，2.4V | 2.5A，2.5A |
