- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,511
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSF QUAD 1.2A 16-SOIC
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET QUAD 1.2A 14DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC MOSFET DVR 85V DUAL TTL 28QFN
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Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 28-VFQFN Exposed Pad | 28-QFN (4x5) | Surface Mount | Inverting，Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC MOSFET DVR 85V SGL PWM 28QFN
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Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 28-VFQFN Exposed Pad | 28-QFN (4x5) | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC MOSF DVR 85V SGL PWM 28TSSOP
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Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | 28-TSSOP | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
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Microchip Technology |
17
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSF DVR 85V SGL PWM 28TSSOP
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Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | 28-TSSOP | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSF DVR 85V SGL PWM 28TSSOP
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- | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | 28-TSSOP | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 112 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8CDIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC MOSFET DRIVER 6A INV 8CDIP
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Tube | - | 4.5 V ~ 18 V | -25°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC MOSFET DVR 3A DUAL HS 8-CDIP
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Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8CDIP
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Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-CDIP
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Tube | - | 4 V ~ 6 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC QUAD CMOS DR AND/INV SW 14DIP
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Tube | - | - | - | 14-DIP (0.300"，7.62mm) | 14-PDIP | Through Hole | - | - | - | 4 | - | - | - | - | - | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-CDIP
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Tube | - | 4 V ~ 6 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 58 MPQ: 1
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IC MOSFET DVR QUAD AND 14CDIP
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Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 14-CDIP (0.300"，7.62mm) | 14-CERDIP | Through Hole | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 58 MPQ: 1
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IC MOSFET DVR AND/INV 14CDIP
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Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 14-CDIP (0.300"，7.62mm) | 14-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 58 MPQ: 1
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IC MOSFET DVR QUAD NAND 14CDIP
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Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 14-CDIP (0.300"，7.62mm) | 14-CERDIP | Through Hole | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 56 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-CDIP
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Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 56 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8CDIP
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Tube | - | 7 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 6A，6A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 112 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A |
