- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 1,511
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
Enquête
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MOQ: 500 MPQ: 1
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IC GATE DRVR HALF-BRIDGE 16TSSOP
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Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 16-TSSOP (0.173",4.40mm Width) | 16-TSSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 108V | 20ns,20ns | 0.8V,2.2V | 1A,1A | ||||
Microchip Technology |
Enquête
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 85V 3PH 28TSSOP
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Tape & Reel (TR) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173",4.40mm Width) | 28-TSSOP | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 85V | 20ns,20ns | 0.8V,2.2V | 1A,1A | ||||
Microchip Technology |
Enquête
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR 85V 3PH 28TSSOP
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Tape & Reel (TR) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173",4.40mm Width) | 28-TSSOP | Surface Mount | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 85V | 20ns,20ns | 0.8V,2.2V | 1A,1A | ||||
Microchip Technology |
Enquête
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MOQ: 180 MPQ: 1
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IC MOSFET DVR QUAD NAND 14DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-PDIP | Through Hole | Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
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MOQ: 1000 MPQ: 1
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IC MOSFET DVR QUAD NAND 16SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
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MOQ: 200 MPQ: 1
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IC MOSFET DRVR 9A N-INV TO220-5
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 60ns,60ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
Enquête
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MOQ: 200 MPQ: 1
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IC MOSFET DRIVER 9A INV TO220-5
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Through Hole | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 60ns,60ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
Enquête
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MOQ: 1000 MPQ: 1
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IC MOSFET DVR AND/INV 16SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
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MOQ: 188 MPQ: 1
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IC MOSFET DVR INV 1.5A 16SOIC
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Tube | - | 4 V ~ 6 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 33ns,27ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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MOQ: 188 MPQ: 1
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IC MOSFET DRIVER 1.5A 16SOIC
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Tube | - | 4 V ~ 6 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 33ns,27ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DVR INV 1.5A 16SOIC
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Tape & Reel (TR) | - | 4 V ~ 6 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 33ns,27ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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MOQ: 1000 MPQ: 1
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IC MOSFET DRIVER 1.5A 16SOIC
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Tape & Reel (TR) | - | 4 V ~ 6 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 33ns,27ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-DIP
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Tube | - | 4 V ~ 6 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 33ns,27ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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MOQ: 180 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-DIP
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Tube | - | 4 V ~ 6 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 33ns,27ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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-
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MOQ: 180 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-DIP
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Tube | - | 4 V ~ 6 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 33ns,27ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DVR INV 1.5A 16SOIC
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Tape & Reel (TR) | - | 4 V ~ 6 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 33ns,27ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 1000 MPQ: 1
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IC MOSFET DRIVER 1.5A 16SOIC
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Tape & Reel (TR) | - | 4 V ~ 6 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 33ns,27ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
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MOQ: 188 MPQ: 1
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IC MOSFET DRIVER 1.5A 16SOIC
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Tube | - | 4 V ~ 6 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 33ns,27ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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-
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MOQ: 188 MPQ: 1
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IC MOSFET DVR INV 1.5A 16SOIC
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Tube | - | 4 V ~ 6 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 33ns,27ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 188 MPQ: 1
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IC MOSFET DVR QUAD NAND 16SOIC
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A |