- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,511
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
Enquête
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- |
-
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MOQ: 3300 MPQ: 1
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IC MOSFET DVR 2A HS INV 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8SOIC
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Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
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Microchip Technology |
55
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1.2A DUAL HS 8SOIC
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Tube | - | 4.5 V ~ 16 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS 8DIP
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Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8DIP
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
|
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Microchip Technology |
3
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 6A 8DFN
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 6A，6A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 2A HS 8SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
|
IC MOSFET DVR 3A HS INV 8SOIC
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Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | 3A，3A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
|
IC MOSFET DVR 3A HS 8SOIC
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | 3A，3A | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 3A HS 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | 3A，3A | |||
|
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 3300 MPQ: 1
|
IC MOSFET DVR 3A HS INV 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | 3A，3A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
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Tape & Reel (TR) | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL-NON 4A 8MSOP
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 4A，4A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 500 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Tape & Reel (TR) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Cut Tape (CT) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
- | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS 8DIP
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8DIP
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 540 MPQ: 1
|
IC MOSFET DVR 3A HS INV 8DIP
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | 3A，3A |
