- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,511
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
1,257
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL-INV 4A 8-MSOP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 4A，4A | |||
|
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC MOSFET DVR HIGH-SIDE 4TQFN
|
Tape & Reel (TR) | - | 2.7 V ~ 9 V | -40°C ~ 125°C (TJ) | 4-UDFN Exposed Pad，4-TMLF? | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，3V | - | |||
|
|
Microchip Technology |
5,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HIGH-SIDE 4TQFN
|
Cut Tape (CT) | - | 2.7 V ~ 9 V | -40°C ~ 125°C (TJ) | 4-UDFN Exposed Pad，4-TMLF? | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，3V | - | |||
|
|
Microchip Technology |
5,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HIGH-SIDE 4TQFN
|
- | - | 2.7 V ~ 9 V | -40°C ~ 125°C (TJ) | 4-UDFN Exposed Pad，4-TMLF? | 4-TQFN (1.2x1.2) | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，3V | - | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE SOT-23
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 40ns，28ns | 0.8V，2V | 500mA，500mA | |||
|
|
Microchip Technology |
2,987
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE SOT-23
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 40ns，28ns | 0.8V，2V | 500mA，500mA | |||
|
|
Microchip Technology |
2,987
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE SOT-23
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 40ns，28ns | 0.8V，2V | 500mA，500mA | |||
|
|
Microchip Technology |
1,838
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8-MLF
|
Cut Tape (CT) | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad，8-MLF? | 8-MLF? (2x2) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，18ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Tape & Reel (TR) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
2,288
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Cut Tape (CT) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
- | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE SOT-23
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Microchip Technology |
1,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE SOT-23
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Microchip Technology |
1,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A SINGLE SOT-23
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 11.5ns，10ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Tape & Reel (TR) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
1,192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
Cut Tape (CT) | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
1,192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
- | - | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns，20ns | 0.8V，2.2V | 1A，1A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC DRIVER MOSFET 85V 10-DFN
|
Tape & Reel (TR) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1A | |||
|
|
Microchip Technology |
4,038
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 85V 10-DFN
|
Cut Tape (CT) | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1A | |||
|
|
Microchip Technology |
4,038
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 85V 10-DFN
|
- | - | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1A |
