Number of Drivers:
High Side Voltage - Max (Bootstrap):
Conditions sélectionnées:
Découvrez les produits 343
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX8552EUB+
Maxim Integrated
32
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET HS 10-UMAX
Tube - 4.5 V ~ 6.5 V -40°C ~ 150°C (TJ) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-uMAX Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET - 14ns,9ns 0.8V,2.5V -
MAX628CPA+
Maxim Integrated
76
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL 8-DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A
TSC427CPA+
Maxim Integrated
31
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR MOSFET DUAL 8-DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 1.5A,1.5A
MAX8811EEE+
Maxim Integrated
83
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR DL PHASE HS 16-QSOP
Tube - 4.5 V ~ 7 V -40°C ~ 150°C (TJ) 16-SSOP (0.154",3.90mm Width) 16-QSOP Surface Mount Non-Inverting Synchronous Half-Bridge 4 N-Channel MOSFET 30V 14ns,9ns 0.8V,2.6V 6A,6A
MAX8702ETP+
Maxim Integrated
45
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR MOSFET DUAL 20-TQFN
Tube - 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 20-WFQFN Exposed Pad 20-TQFN (4x4) Surface Mount Non-Inverting Synchronous Half-Bridge 4 N-Channel MOSFET - 16ns,14ns 0.8V,2.4V 1.5A,1.5A
MAX5055BASA+
Maxim Integrated
61
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5063AASA+
Maxim Integrated
62
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF BRDG HS 8-SOIC
Tube - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns 0.8V,2V 2A,2A
MAX626EPA+
Maxim Integrated
100
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL 8-DIP
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A
MAX20307EWL+
Maxim Integrated
85
3 jours
-
MOQ: 1  MPQ: 1
IC GAN HI FREQ DRIVER 60V 15WLP
Bulk - 4.5 V ~ 5.5 V -40°C ~ 85°C 15-WFBGA,WLBGA 15-WLP (1.22x2.05) Surface Mount TTL Synchronous Half-Bridge 2 N-Channel MOSFET 60V 5ns,1ns 0.4V,1.6V 1A,5A
MAX17601AUA+
Maxim Integrated
20
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8UMAX
Tube - 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 40ns,25ns 0.8V,2.1V 4A,4A
MAX626ESA+
Maxim Integrated
6
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A
TSC426CPA+
Maxim Integrated
25
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL 8-DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 1.5A,1.5A
MAX17602AUA+
Maxim Integrated
25
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8UMAX
Tube - 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 40ns,25ns 0.8V,2.1V 4A,4A
MAX17604ASA+
Maxim Integrated
17
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRVR 4A DUAL 8SOIC
Tube - 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 40ns,25ns 2V,4.25V 4A,4A
MAX15013DASA+
Maxim Integrated
2
3 jours
-
MOQ: 1  MPQ: 1
IC HALF-BRIDGE MOSFET DVR 8-SOIC
Tube - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 175V 65ns,65ns 0.8V,2V 2A,2A
MAX5063CASA+
Maxim Integrated
1
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER 8-SOIC
Tube - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 65ns,65ns 0.8V,2V 2A,2A
MAX17600AUA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8UMAX
Tape & Reel (TR) - 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 40ns,25ns 0.8V,2.1V 4A,4A
MAX17601AUA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8UMAX
Tape & Reel (TR) - 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 40ns,25ns 0.8V,2.1V 4A,4A
MAX17602AUA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8UMAX
Tape & Reel (TR) - 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 40ns,25ns 0.8V,2.1V 4A,4A
MAX17603AUA+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRVR 4A DUAL 8UMAX
Tape & Reel (TR) - 4 V ~ 14 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 40ns,25ns 2V,4.25V 4A,4A