- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 343
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
1,870
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-TDFN
|
Cut Tape (CT) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
|
|
|
Maxim Integrated |
1,870
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8-TDFN
|
- | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
|
|
|
Maxim Integrated |
1,520
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
Cut Tape (CT) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
|
|
|
Maxim Integrated |
1,520
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
- | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
|
|
|
Maxim Integrated |
881
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
Tube | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
|
|
|
Maxim Integrated |
413
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
Tube | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
|
|
|
Maxim Integrated |
55
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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|
|
Maxim Integrated |
27
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSF DRVR HALF BRDG HS 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 50ns，40ns | - | 3A，3A | ||
|
|
|
Maxim Integrated |
92
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
|
|
|
Maxim Integrated |
83
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-SOIC
|
Tube | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A | ||
|
|
|
Maxim Integrated |
61
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET QUAD 18-DIP
|
Tube | - | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Through Hole | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
|
|
|
Maxim Integrated |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 125V | 65ns，65ns | 0.8V，2V | 2A，2A | ||
|
|
|
Maxim Integrated |
82
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF-BRIDGE MOSFET DVR 8-SOIC
|
Tube | - | 8 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 175V | 65ns，65ns | 0.8V，2V | 2A，2A | ||
|
|
|
Maxim Integrated |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Strip | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
|
Maxim Integrated |
390
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
Tube | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
|
Maxim Integrated |
288
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
Tube | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
|
|
|
Maxim Integrated |
118
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
Tube | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，SiC MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
|
Maxim Integrated |
114
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8SOIC
|
Tube | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，SiC MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
|
Maxim Integrated |
51
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8UMAX
|
Tube | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-uMax-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 2V，4.25V | 4A，4A |
