- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 343
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DRVR 4A DUAL 8TDFN
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Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
1,390
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR 4A DUAL 8TDFN
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Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
1,390
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
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Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
|
|
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Maxim Integrated |
1,287
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
|
|
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Maxim Integrated |
1,287
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，25ns | 0.8V，2.1V | 4A，4A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC HALF-BRIDGE TDFN-8
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Tape & Reel (TR) | - | 4.2 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-WFDFN Exposed Pad | 8-TDFN-EP (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 14ns，7ns | - | 2.2A，2.7A | ||
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|
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Maxim Integrated |
3,386
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HALF-BRIDGE TDFN-8
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Cut Tape (CT) | - | 4.2 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-WFDFN Exposed Pad | 8-TDFN-EP (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 14ns，7ns | - | 2.2A，2.7A | ||
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Maxim Integrated |
3,386
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HALF-BRIDGE TDFN-8
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- | - | 4.2 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-WFDFN Exposed Pad | 8-TDFN-EP (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 14ns，7ns | - | 2.2A，2.7A | ||
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Maxim Integrated |
780
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR NOTEBOOK
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Tube | - | 4.2 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 8-WQFN Exposed Pad | 8-TQFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 24V | 10ns，8ns | - | 2A，2.7A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC DVR MOSFET HI-SIDE NCH 8-UMAX
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Tape & Reel (TR) | - | 5 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-uMAX | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.6V，2V | - | ||
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|
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Maxim Integrated |
2,527
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC DVR MOSFET HI-SIDE NCH 8-UMAX
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Cut Tape (CT) | - | 5 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-uMAX | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.6V，2V | - | ||
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|
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Maxim Integrated |
2,527
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR MOSFET HI-SIDE NCH 8-UMAX
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- | - | 5 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-uMAX | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.6V，2V | - | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR HIGH SPEED SOT23-6
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Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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|
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Maxim Integrated |
1,690
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR HIGH SPEED SOT23-6
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Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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|
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Maxim Integrated |
1,690
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HIGH SPEED SOT23-6
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- | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
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Tape & Reel (TR) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 42ns，30ns | 0.8V，2V | 2A，4A | ||
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|
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Maxim Integrated |
678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
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Cut Tape (CT) | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 42ns，30ns | 0.8V，2V | 2A，4A | ||
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|
|
Maxim Integrated |
678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
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- | Automotive，AEC-Q100 | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 42ns，30ns | 0.8V，2V | 2A，4A | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR DUAL 8-TDFN
|
Tape & Reel (TR) | - | 4 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 32ns，26ns | 0.8V，2.1V | 4A，4A |
