Number of Drivers:
High Side Voltage - Max (Bootstrap):
Conditions sélectionnées:
Découvrez les produits 343
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX8791GTA+
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC MOSFET DRIVER 8-TQFN
Tube - 4.2 V ~ 5.5 V -40°C ~ 150°C (TJ) 8-WQFN Exposed Pad 8-TQFN-EP Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET - 10ns,8ns - 2.2A,2.7A
MAX15070AEUT+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER TTL SOT23-6
Tape & Reel (TR) - 4 V ~ 14 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 25ns,14ns 0.8V,2V 3A,7A
MAX15070BAUT+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRIVER HNM LL SOT23-6
Tape & Reel (TR) - 6 V ~ 14 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 36ns,17ns 2V,4.25V 3A,7A
MAX15070BEUT+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER HNM LL SOT23-6
Tape & Reel (TR) - 6 V ~ 14 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 36ns,17ns 2V,4.25V 3A,7A
MAX4420ESA-T
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC DRIVER MOSFET 6A HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 6A,6A
MAX4427ESA-T
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC DRIVER DUAL MOSFET 1.5A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
MAX4429ESA
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC MOSFET DRV SGL 6A HS 8-SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 6A,6A
MAX4429ESA-T
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC MOSFET DRV SGL 6A HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 6A,6A
MAX5048AATT-T
Maxim Integrated
Enquête
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-
MOQ: 10000  MPQ: 1
IC MOSFET DRIVER 6-TDFN
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns - 1.3A,7.6A
MAX5048AAUT-T
Maxim Integrated
Enquête
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-
MOQ: 10000  MPQ: 1
IC MOSFET DRIVER HS SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns - 1.3A,7.6A
MAX5048BATT-T
Maxim Integrated
Enquête
-
-
MOQ: 10000  MPQ: 1
IC MOSFET DRIVER 6-TDFN
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 0.8V,2.4V 1.3A,7.6A
MAX5048BAUT-T
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC MOSFET DVR HIGH SPEED SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 0.8V,2.4V 1.3A,7.6A
MAX5054AATA-T
Maxim Integrated
Enquête
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-
MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-TDFN
Tape & Reel (TR) - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns - 4A,4A
MAX5054BATA-T
Maxim Integrated
Enquête
-
-
MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-TDFN
Tape & Reel (TR) - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5055AASA
Maxim Integrated
Enquête
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-
MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5055AASA-T
Maxim Integrated
Enquête
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-
MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tape & Reel (TR) - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5055BASA
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5055BASA-T
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tape & Reel (TR) - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5056AASA
Maxim Integrated
Enquête
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MOQ: 10000  MPQ: 1
IC MOSFET DRVR DUAL 8-SOIC
Tube - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX5056AASA-T
Maxim Integrated
Enquête
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-
MOQ: 10000  MPQ: 1
IC MOSFET DVR 4A 20NS DUAL 8SOIC
Tape & Reel (TR) - 4 V ~ 15 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A