Number of Drivers:
High Side Voltage - Max (Bootstrap):
Conditions sélectionnées:
Découvrez les produits 343
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX5075AAUA
Maxim Integrated
Enquête
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-
MOQ: 10000  MPQ: 1
IC DRVR FET P-P 8-UMAX
Tube - 4.5 V ~ 15 V -40°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-uMax-EP Surface Mount RC Input Circuit Synchronous Low-Side 2 N-Channel MOSFET - 10ns,10ns - 3A,3A
MAX15024DATB+T
Maxim Integrated
Enquête
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-
MOQ: 2500  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
Tape & Reel (TR) - 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 24ns,16ns - 4A,8A
MAX15024CATB+T
Maxim Integrated
Enquête
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-
MOQ: 2500  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
Tape & Reel (TR) - 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 24ns,16ns - 4A,8A
MAX15024BATB+T
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
Tape & Reel (TR) Automotive,AEC-Q100 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 24ns,16ns 2V,4.25V 4A,8A
MAX15025BATB+T
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) Automotive,AEC-Q100 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 48ns,32ns 2V,4.25V 2A,4A
MAX15025CATB+T
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) Automotive,AEC-Q100 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 42ns,30ns 0.8V,2V 2A,4A
MAX15025GATB+T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) - 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 48ns,32ns - 2A,4A
MAX15025HATB+T
Maxim Integrated
Enquête
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-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) - 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 48ns,32ns - 2A,4A
MAX15025FATB+T
Maxim Integrated
Enquête
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-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) - 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 48ns,32ns - 2A,4A
MAX15025DATB+T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) Automotive,AEC-Q100 6.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 48ns,32ns 2V,4.25V 2A,4A
MAX15025EATB+T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) - 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 48ns,32ns - 2A,4A
MAX15018AASA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSF DRVR HALF BRDG HS 8-SOIC
Tape & Reel (TR) - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 125V 50ns,40ns - 3A,3A
MAX5048AAUT#TG16
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER HS SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 150°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns - 1.3A,7.6A
MAX4429ESA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRV SGL 6A HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 6A,6A
MAX4426ESA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRVR DUAL INV 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
MAX4429CSA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRV SGL 6A HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 6A,6A
MAX4428CSA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRVR INV/NONINV 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
MAX15012DASA+T
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC HALF-BRIDGE MOSFET DVR 8-SOIC
Tape & Reel (TR) - 8 V ~ 12.6 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 175V 65ns,65ns - 2A,2A
MAX5078BATT/V+T
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DVR 4A 20NS 6-TDFN
Tape & Reel (TR) Automotive,AEC-Q100 4 V ~ 15 V -40°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-TDFN-EP (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 32ns,26ns 0.8V,2.1V 4A,4A
MAX8791BGTA+
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSF DRIVER 1PH SYNCH 8TQFN
Tube - 4.2 V ~ 5.5 V -40°C ~ 150°C (TJ) 8-WQFN Exposed Pad 8-TQFN-EP Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET - 10ns,8ns - 2.2A,2.7A