Number of Drivers:
Découvrez les produits 896
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ISL78444AVEZ-T7A
Renesas Electronics America Inc.
500
3 jours
-
MOQ: 1  MPQ: 1
100V BOOT 4A PEAK HALF-BRIDGE DR
Cut Tape (CT) - - - - - - - - - - - - - - -
ISL78444AVEZ-T7A
Renesas Electronics America Inc.
500
3 jours
-
MOQ: 1  MPQ: 1
100V BOOT 4A PEAK HALF-BRIDGE DR
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ISL78424AVEZ-T7A
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 250  MPQ: 1
100V BOOT 4A PEAK HALF-BRIDGE DR
Tape & Reel (TR) - - - - - - - - - - - - - - -
ISL78424AVEZ-T7A
Renesas Electronics America Inc.
490
3 jours
-
MOQ: 1  MPQ: 1
100V BOOT 4A PEAK HALF-BRIDGE DR
Cut Tape (CT) - - - - - - - - - - - - - - -
ISL78424AVEZ-T7A
Renesas Electronics America Inc.
490
3 jours
-
MOQ: 1  MPQ: 1
100V BOOT 4A PEAK HALF-BRIDGE DR
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ISL78434AVEZ-T7A
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 250  MPQ: 1
100V BOOT 4A PEAK HALF-BRIDGE DR
Tape & Reel (TR) - - - - - - - - - - - - - - -
ISL78434AVEZ-T7A
Renesas Electronics America Inc.
490
3 jours
-
MOQ: 1  MPQ: 1
100V BOOT 4A PEAK HALF-BRIDGE DR
Cut Tape (CT) - - - - - - - - - - - - - - -
ISL78434AVEZ-T7A
Renesas Electronics America Inc.
490
3 jours
-
MOQ: 1  MPQ: 1
100V BOOT 4A PEAK HALF-BRIDGE DR
- - - - - - - - - - - - - - - -
HIP2106AIRZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
SYNCH RECT BUCK MOSFET
Tape & Reel (TR) - 4.5 V ~ 5.5 V -40°C ~ 85°C (TA) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount - Synchronous Half-Bridge 2 N-Channel MOSFET - - 1.3V,1.9V -,4A
HIP2106AIRZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
SYNCH RECT BUCK MOSFET
Tube - 4.5 V ~ 5.5 V -40°C ~ 85°C (TA) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount - Synchronous Half-Bridge 2 N-Channel MOSFET - - 1.3V,1.9V -,4A
ZL1505ALNFT6
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DVR STP-DN SYNC 10DFN
Tape & Reel (TR) - 4.5 V ~ 7.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 30V 5.3ns,4.8ns 1.7V,3.4V 3.2A,3.2A
ZL1505ALNFT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DVR STP-DN SYNC 10DFN
Tape & Reel (TR) - 4.5 V ~ 7.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 30V 5.3ns,4.8ns 1.7V,3.4V 3.2A,3.2A
ZL1505ALNFT1
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DVR STP-DN SYNC 10DFN
Tape & Reel (TR) - 4.5 V ~ 7.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 30V 5.3ns,4.8ns 1.7V,3.4V 3.2A,3.2A
ISL6625ACRZ-TK
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRVR SYNCH RECT 8DFN
Tape & Reel (TR) - 5.5 V ~ 13.2 V 0°C ~ 125°C (TJ) 8-VFDFN Exposed Pad 8-DFN-EP (2x2) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 31ns,18ns - -,3A
ZL1505ALNNT6
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DVR STP-DN SYNC 10DFN
Tape & Reel (TR) - 4.5 V ~ 7.5 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 30V 5.3ns,4.8ns 1.7V,3.4V 3.2A,3.2A
HIP4082IBZTS2366A
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FET DVR H BRIDGE 16SOIC
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