- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 896
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 6000 MPQ: 1
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IC HALF BRIDGE FET DRIVER 9TDFN
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Tape & Reel (TR) | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 3.7V，7.93V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
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Tube | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
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Tube | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
Tube | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 3.7V，7.93V | 2A，2A | ||
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|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 3.7V，7.93V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
Tube | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 3.7V，7.93V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
Tube | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
Tube | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.4V，2.2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 980 MPQ: 1
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IC MOSFET DRVR SYNCH RECT 8SOIC
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 8ns，8ns | 1V，2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC MOSFET DRVR SYNCH RECT 8QFN
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 125°C (TJ) | 8-VQFN Exposed Pad | 8-QFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 8ns，8ns | 1V，2V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
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Tube | Automotive，AEC-Q100 | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 750 MPQ: 1
|
IC DRVR HALF BRIDGE 9DFN
|
Tube | Automotive，AEC-Q100 | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRIDGE 9DFN
|
Tape & Reel (TR) | Automotive，AEC-Q100 | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 9DFN
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Cut Tape (CT) | Automotive，AEC-Q100 | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 250 MPQ: 1
|
100V BOOT 4A PEAK HALF-BRIDGE DR
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Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
