Number of Drivers:
Découvrez les produits 896
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
ISL89162FRTAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL6605CRZ-TK
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC MOSFET DVR SYNC BUCK 8QFN
Tape & Reel (TR) - 4.5 V ~ 5.5 V 0°C ~ 125°C (TJ) 8-VQFN Exposed Pad 8-QFN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 33V 8ns,8ns 1V,2V 2A,2A
ISL2100AABZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC DVR HALF-BRDGE HI FREQ 8SOIC
Tube - 9 V ~ 14 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 3.7V,7.4V 2A,2A
ISL6611AIRZ
Renesas Electronics America Inc.
Enquête
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MOQ: 750  MPQ: 1
IC REG CTRLR DOUBLER PWM 16-QFN
Tube - 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 16-VQFN Exposed Pad 16-QFN (4x4) Surface Mount Non-Inverting Synchronous Half-Bridge 4 N-Channel MOSFET 36V 8ns,8ns 0.8V,2V -,4A
ISL6615AFRZ
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC MOSFET DRIVER N-CH 10DFN
Tube - 6.8 V ~ 13.2 V -40°C ~ 125°C (TJ) 10-VFDFN Exposed Pad 10-DFN (3x3) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 36V 13ns,10ns - 2.5A,4A
ISL89160FBEAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89160FRTAZ
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8TDFN
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89161FBEAZ
Renesas Electronics America Inc.
Enquête
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-
MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89161FRTAZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8TDFN
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89162FBEAZ
Renesas Electronics America Inc.
Enquête
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-
MOQ: 980  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89162FRTAZ
Renesas Electronics America Inc.
Enquête
-
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MOQ: 1000  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8TDFN
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89160FBEBZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89160FRTBZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 6000  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89161FBEBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89161FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89162FBEBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89162FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.85V,3.15V 6A,6A
ISL89166FBEAZ-T
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89166FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8TDFN
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-WDFN Exposed Pad 8-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A
ISL89167FBEAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 2CH 6A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET - 20ns,20ns 1.22V,2.08V 6A,6A