- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 896
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
2,481
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 8-SOIC
|
Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 9ns,7.5ns | 1.4V,2.2V | 3A,4A | ||||
Renesas Electronics America Inc. |
963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MSFT DVR HALF-BRG 100V 10TDFN
|
Tube | - | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 9ns,7.5ns | 1.4V,2.2V | 3A,4A | ||||
Renesas Electronics America Inc. |
1,937
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR HS 8-SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 4A,4A | ||||
Renesas Electronics America Inc. |
882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CMOS QUAD 40MHZ 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 13.5ns,13ns | 0.8V,2V | 2A,2A | ||||
Renesas Electronics America Inc. |
2,362
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20SOIC
|
Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns,10ns | 1V,2.5V | 2.6A,2.4A | ||||
Renesas Electronics America Inc. |
1,263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20DIP
|
Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300",7.62mm) | 20-PDIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns,10ns | 1V,2.5V | 2.6A,2.4A | ||||
Renesas Electronics America Inc. |
4,488
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MONO PIN DVR HS 8-SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel MOSFET | - | 4ns,4ns | 0.6V,2.4V | 4A,4A | ||||
Renesas Electronics America Inc. |
938
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3-PHASE FET 24-SOIC
|
Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295",7.50mm Width) | 24-SOIC | Surface Mount | Inverting,Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns,10ns | 1V,2.5V | 500mA,500mA | ||||
Renesas Electronics America Inc. |
1,899
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET 3PHASE N-CH 24DIP
|
Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-DIP (0.300",7.62mm) | 24-PDIP | Through Hole | Inverting,Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns,10ns | 1V,2.5V | 500mA,500mA | ||||
Renesas Electronics America Inc. |
250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
358
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
Cut Tape (CT) | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
358
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DRIVER 8SOIC
|
- | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
1,838
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tube | - | 9 V ~ 14 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
2,401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC BUCK 10-DFN
|
Tube | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 36V | 8ns,8ns | - | -,4A | ||||
Renesas Electronics America Inc. |
250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC PIN DVR 40MHZ 3ST 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns,15ns | 0.8V,2.4V | 3.5A,3.5A | ||||
Renesas Electronics America Inc. |
258
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DVR 40MHZ 3ST 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns,15ns | 0.8V,2.4V | 3.5A,3.5A | ||||
Renesas Electronics America Inc. |
258
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DVR 40MHZ 3ST 8SOIC
|
- | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns,15ns | 0.8V,2.4V | 3.5A,3.5A | ||||
Renesas Electronics America Inc. |
1,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR DUAL HS 8DIP
|
Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Renesas Electronics America Inc. |
1,186
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL-BRIDGE 20-SOIC
|
Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns,10ns | 1V,2.5V | 2.6A,2.4A | ||||
Renesas Electronics America Inc. |
1,293
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,10ns | 0.8V,2.4V | 2A,2A |