PMIC - Pilotes de porte - Zui Ai Technology（Taiwan）Company.

Packaging：

Voltage - Supply：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Input Type：

Channel Type：

Driven Configuration：

Number of Drivers：

Gate Type：

High Side Voltage - Max (Bootstrap)：

Rise / Fall Time (Typ)：

Logic Voltage - VIL, VIH：

Current - Peak Output (Source, Sink)：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Input Type	Channel Type	Driven Configuration	Number of Drivers	Gate Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Input Type	Channel Type	Driven Configuration	Number of Drivers	Gate Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)
	IXDD609SITR	IXYS Integrated Circuits Division	Enquête	-	-	IC GATE DVR 9A NON-INV 8SOIC MOQ: 2000 MPQ: 1	IC GATE DVR 9A NON-INV 8SOIC	Tape & Reel (TR)	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	22ns，15ns	0.8V，3V	9A，9A
	IXDI609SITR	IXYS Integrated Circuits Division	Enquête	-	-	IC GATE DVR 9A NON-INV 8SOIC MOQ: 2000 MPQ: 1	IC GATE DVR 9A NON-INV 8SOIC	Tape & Reel (TR)	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	22ns，15ns	0.8V，3V	9A，9A
	IXDI609SI	IXYS Integrated Circuits Division	Enquête	-	-	IC GATE DVR 9A NON-INV 8SOIC MOQ: 1000 MPQ: 1	IC GATE DVR 9A NON-INV 8SOIC	Tube	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	22ns，15ns	0.8V，3V	9A，9A
	IXDD604SITR	IXYS Integrated Circuits Division	Enquête	-	-	IC GATE DVR 4A DUAL HS 8SOIC MOQ: 2000 MPQ: 1	IC GATE DVR 4A DUAL HS 8SOIC	Tape & Reel (TR)	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Non-Inverting	Independent	Low-Side	2	IGBT，N-Channel，P-Channel MOSFET	-	9ns，8ns	0.8V，3V	4A，4A
	IXDF604SITR	IXYS Integrated Circuits Division	Enquête	-	-	IC GATE DVR 4A DUAL HS 8SOIC MOQ: 2000 MPQ: 1	IC GATE DVR 4A DUAL HS 8SOIC	Tape & Reel (TR)	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Inverting，Non-Inverting	Independent	Low-Side	2	IGBT，N-Channel，P-Channel MOSFET	-	9ns，8ns	0.8V，3V	4A，4A
	IXDI604SITR	IXYS Integrated Circuits Division	Enquête	-	-	IC GATE DVR 4A DUAL HS 8SOIC MOQ: 2000 MPQ: 1	IC GATE DVR 4A DUAL HS 8SOIC	Tape & Reel (TR)	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Inverting	Independent	Low-Side	2	IGBT，N-Channel，P-Channel MOSFET	-	9ns，8ns	0.8V，3V	4A，4A
	IXDN604SITR	IXYS Integrated Circuits Division	Enquête	-	-	IC GATE DVR 4A DUAL HS 8SOIC MOQ: 2000 MPQ: 1	IC GATE DVR 4A DUAL HS 8SOIC	Tape & Reel (TR)	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Non-Inverting	Independent	Low-Side	2	IGBT，N-Channel，P-Channel MOSFET	-	9ns，8ns	0.8V，3V	4A，4A
	IXDD609YI	IXYS Integrated Circuits Division	Enquête	-	-	IC GATE DVR 9A NON-INV TO263-5 MOQ: 1000 MPQ: 1	IC GATE DVR 9A NON-INV TO263-5	Tube	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA	TO-263	Surface Mount	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	22ns，15ns	0.8V，3V	9A，9A
	IXDN609YI	IXYS Integrated Circuits Division	Enquête	-	-	IC GATE DVR 9A NON-INV TO263-5 MOQ: 1000 MPQ: 1	IC GATE DVR 9A NON-INV TO263-5	Tube	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA	TO-263-5	Surface Mount	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	22ns，15ns	0.8V，3V	9A，9A
	IXDD614SITR	IXYS Integrated Circuits Division	Enquête	-	-	14A 8SOIC EXP MTL NON INV W/ENAB MOQ: 2000 MPQ: 1	14A 8SOIC EXP MTL NON INV W/ENAB	Tape & Reel (TR)	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	25ns，18ns	0.8V，3V	14A，14A
	IXDI614SITR	IXYS Integrated Circuits Division	Enquête	-	-	14A 8LEAD SOIC EXP MTL INVERTING MOQ: 2000 MPQ: 1	14A 8LEAD SOIC EXP MTL INVERTING	Tape & Reel (TR)	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	25ns，18ns	0.8V，3V	14A，14A
	IXDN614SITR	IXYS Integrated Circuits Division	Enquête	-	-	14A 8SOIC EXP MTL NON INVERTING MOQ: 2000 MPQ: 1	14A 8SOIC EXP MTL NON INVERTING	Tape & Reel (TR)	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	25ns，18ns	0.8V，3V	14A，14A
	IXDD614SI	IXYS Integrated Circuits Division	Enquête	-	-	14A 8SOIC EXP MTL NON INV W/ENAB MOQ: 1000 MPQ: 1	14A 8SOIC EXP MTL NON INV W/ENAB	Tube	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	25ns，18ns	0.8V，3V	14A，14A
	IXDI614SI	IXYS Integrated Circuits Division	Enquête	-	-	14A 8LEAD SOIC EXP MTL INVERTING MOQ: 1000 MPQ: 1	14A 8LEAD SOIC EXP MTL INVERTING	Tube	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	25ns，18ns	0.8V，3V	14A，14A
	IXDN614SI	IXYS Integrated Circuits Division	Enquête	-	-	14A 8SOIC EXP MTL NON INVERTING MOQ: 1000 MPQ: 1	14A 8SOIC EXP MTL NON INVERTING	Tube	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width) Exposed Pad	8-SOIC-EP	Surface Mount	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	25ns，18ns	0.8V，3V	14A，14A
	IXDI614CI	IXYS Integrated Circuits Division	Enquête	-	-	14A 5 PIN TO-220 INVERTING MOQ: 1000 MPQ: 1	14A 5 PIN TO-220 INVERTING	Tube	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	TO-220-5 Formed Leads	TO-220-5	Through Hole	Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	25ns，18ns	0.8V，3V	14A，14A
	IXDN614CI	IXYS Integrated Circuits Division	Enquête	-	-	14A 5PIN TO-220 NON INVERTING MOQ: 1000 MPQ: 1	14A 5PIN TO-220 NON INVERTING	Tube	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	TO-220-5 Formed Leads	TO-220-5	Through Hole	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	25ns，18ns	0.8V，3V	14A，14A
	IXDN614YI	IXYS Integrated Circuits Division	Enquête	-	-	14A 5LEAD TO-263 NON INVERTING MOQ: 1000 MPQ: 1	14A 5LEAD TO-263 NON INVERTING	Tube	4.5 V ~ 35 V	-55°C ~ 150°C (TJ)	TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA	TO-263-5	Surface Mount	Non-Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	25ns，18ns	0.8V，3V	14A，14A
	IX2120B	IXYS Integrated Circuits Division	Enquête	-	-	1200V HIGH AND LOW SIDE GATE DRI MOQ: 980 MPQ: 1	1200V HIGH AND LOW SIDE GATE DRI	Tube	15 V ~ 20 V	-40°C ~ 150°C (TJ)	28-SOIC (0.295"，7.50mm Width)	28-SOIC	Surface Mount	Non-Inverting	Independent	Half-Bridge	2	IGBT，N-Channel MOSFET	1200V	9.4ns，9.7ns	6V，9.5V	2A，2A
	IXDI630MYI	IXYS Integrated Circuits Division	Enquête	-	-	IC GATE DRIVER LOW SIDE 5TO263 MOQ: 250 MPQ: 1	IC GATE DRIVER LOW SIDE 5TO263	Tube	9 V ~ 35 V	-55°C ~ 150°C (TJ)	TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA	TO-263-5	Surface Mount	Inverting	Single	Low-Side	1	IGBT，N-Channel，P-Channel MOSFET	-	11ns，11ns	0.8V，3.5V	30A，30A

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