- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 139
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC GATE DVR 9A NON-INV 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC GATE DVR 9A NON-INV 8SOIC
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC GATE DVR 9A NON-INV 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC GATE DVR 9A NON-INV 8SOIC
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC GATE DVR 4A DUAL HS 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 2000 MPQ: 1
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2A 8SOIC EXP MTL DUAL IN/NON-INV
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 2000 MPQ: 1
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2A 8 SOIC EXP METAL DUAL INVERT
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 2000 MPQ: 1
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2A 8SOIC EXP MTL DUAL NON INVERT
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Tape & Reel (TR) | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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2A 8SOIC EXP MTL DUAL IN/NON-INV
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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2A 8 SOIC EXP METAL DUAL INVERT
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC HIGH SIDE DRIVER 8DIP
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Tube | 9 V ~ 12 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 0.8V，3V | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC HIGH SIDE DRIVER 8SOIC
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Tube | 9 V ~ 12 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 0.8V，3V | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC MOSFET/IGBT DVR 600V 8-SOIC
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Tape & Reel (TR) | 9 V ~ 12 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 0.8V，3V | 250mA，500mA | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 2000 MPQ: 1
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IC GATE DVR HALF 600V 14SOIC
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Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 23ns，14ns | 0.8V，2V | 1.4A，1.8A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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14A 8 PIN DIP INVERTING
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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14A 8 PIN DIP NON INVERTING
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC GATE DVR HIGH/LOW 600V 16SOIC
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Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC GATE DVR HIGH/LOW 600V 16SOIC
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC GATE DVR HALF 600V 14DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 23ns，14ns | 0.8V，2V | 1.4A，1.8A | ||
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IXYS Integrated Circuits Division |
Enquête
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MOQ: 1000 MPQ: 1
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IC GATE DRVR 600V HI/LO 14DIP
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A |
