- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 139
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
695
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO263
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Tube | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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IXYS Integrated Circuits Division |
1,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
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14A 5 LEAD TO-263 INVERTING
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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IXYS Integrated Circuits Division |
376
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
831
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3 jours |
-
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MOQ: 1 MPQ: 1
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5-AMP DUAL LOW-SIDE MOSFET DRIVE
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Tube | 5 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.8V，2.5V | 5A，5A | ||
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IXYS Integrated Circuits Division |
991
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-SO
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
149
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3 jours |
-
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MOQ: 1 MPQ: 1
|
MOSFET N-CH 2A DUAL LO SIDE 8-DI
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
633
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A INV 8-DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
581
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL ENABLE 8DIP
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
715
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3 jours |
-
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MOQ: 1 MPQ: 1
|
MOSFET N-CH 2A DUAL LO SIDE 8-SO
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Tube | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF 600V 14SOIC
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Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 23ns，14ns | 0.8V，2V | 1.4A，1.8A | ||
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IXYS Integrated Circuits Division |
262
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A SOIC
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Tube | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，3V | 3A，3A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
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Tube | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
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1200V HIGH AND LOW SIDE GATE DRI
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Tape & Reel (TR) | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
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Cut Tape (CT) | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
1200V HIGH AND LOW SIDE GATE DRI
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- | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 9.4ns，9.7ns | 6V，9.5V | 2A，2A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
Tape & Reel (TR) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
Cut Tape (CT) | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A |
